AO6801L

更新时间： 2024-10-30 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	108K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

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AO6801L 数据手册

AO6801

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO6801 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO6801 is Pb-free

(meets ROHS & Sony 259 specifications). AO6801L

is a Green Product ordering option. AO6801 and

AO6801L are electrically identical.

V_DS(V) = -30V

I_D= -2.3 A (V_GS= -10V)

R_DS(ON)< 135mΩ (V_GS= -10V)

R_DS(ON)< 185mΩ (V_GS= -4.5V)

R_DS(ON)< 265mΩ (V_GS= -2.5V)

TSOP6

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

V_GS

±12

T_A=25°C

T_A=70°C

-2.3

I_D

-1.8

Pulsed Drain Current ^B

I_DM

-20

T_A=25°C

T_A=70°C

1.15

P_D

Power Dissipation ^A

0.73

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

106

Max

110

150

Units

°C/W

t ≤ 10s

Steady-State

Maximum Junction-to-Ambient

Maximum Junction-to-Lead ^C

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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