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AO6801L PDF预览

AO6801L

更新时间: 2024-11-25 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 108K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

AO6801L 数据手册

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AO6801  
Dual P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO6801 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AO6801 is Pb-free  
(meets ROHS & Sony 259 specifications). AO6801L  
is a Green Product ordering option. AO6801 and  
AO6801L are electrically identical.  
VDS (V) = -30V  
ID = -2.3 A (VGS = -10V)  
RDS(ON) < 135m(VGS = -10V)  
RDS(ON) < 185m(VGS = -4.5V)  
RDS(ON) < 265m(VGS = -2.5V)  
D1  
S1  
D2  
S2  
TSOP6  
Top View  
G1  
S2  
G2  
1
2
3
6
5
4
D1  
S1  
D2  
G1  
G2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
-30  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
VGS  
±12  
TA=25°C  
TA=70°C  
-2.3  
ID  
-1.8  
A
Pulsed Drain Current B  
IDM  
-20  
TA=25°C  
TA=70°C  
1.15  
PD  
W
Power Dissipation A  
0.73  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
78  
106  
64  
Max  
110  
150  
80  
Units  
°C/W  
°C/W  
°C/W  
A
t 10s  
Steady-State  
Steady-State  
Maximum Junction-to-Ambient  
Maximum Junction-to-Ambient  
Maximum Junction-to-Lead C  
RθJA  
A
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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