Datasheet > AO6601

AO6601

更新时间： 2024-09-13 12:52:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
7页	517K
描述
N & P-Channel 32-V (D-S) MOSFET High performance trench technology

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AO6601 数据手册

Freescale

AO6601 /MC6601

N & P-Channel 32-V (D-S) MOSFET

These miniature surface mount MOSFETs

utilize a high cell density trench process to

provide low r_DS(on)and to ensure minimal

power loss and heat dissipation. Typical

applications are DC-DC converters and

power management in portable and

battery-powered products such as

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(Ω)

I_D(A)

3.7

0.063 @ V_GS= 10V

0.090 @ V_GS= 4.5V

0.112 @ V_GS= -10V

0.172 @ V_GS= -4.5V

3.1

-2.7

-2.2

-30

computers, printers, PCMCIA cards,

cellular and cordless telephones.

TSOP-6

D₁

S₂

Top View

•

Low r_DS(on)provides higher efficiency and

extends battery life

G₂

G₁

Low thermal impedance copper leadframe

TSOP-6 saves board space

S₁

D₂

P-Channel MOSFET

N-Channel MOSFET

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 C UNLESS OTHERWISE NOTED)

Parameter Symbol N-Channel P-Channel Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

3.7

-30

±20

T_A=25^oC

T_A=70^oC

-2.7

-2.1

-8

Continuous Drain Current^a

I_D

2.9

Pulsed Drain Current^b

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

T_A=25^oC

-1.05

1.05

1.15

Power Dissipation^a

P_D

T_A=70^oC

0.7

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

N-Channel

P-Channel

Parameter

Symbol

Unit

Typ

Max

110

Typ

Max

110

t <= 10 sec

Maximum Junction-to-Ambient^a

^oC/W

R_thJA

Steady State

130

150

130

150

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

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