Datasheet > AO6602_11

AO6602_11

更新时间： 2024-11-25 12:24:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
9页	327K
描述
30V Complementary MOSFET

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AO6602_11 数据手册

AO6602

30V Complementary MOSFET

General Description

Product Summary

The AO6602 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. The

N-Channel

_DS= 30V

P-Channel

-30V

complementary MOSFETs form a high-speed power

inverter, suitable for a multitude of applications.

I_D= 3.5A (V_GS=10V)

R_DS(ON)

-2.7A (V_GS=-10V)

R_DS(ON)

< 50mꢀ (V_GS=10V)

< 70mꢀ (V_GS=4.5V)

< 100mꢀ (VGS=-10V)

< 170mꢀ (VGS=-4.5V)

TSOP6

Top View

Bottom View

Top View

Pin1

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Max n-channel

Max p-channel

Units

Drain-Source Voltage

Gate-Source Voltage

±20

3.5

-30

±20

-2.7

-2.1

-15

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

I_DM

P_D

T_A=25°C

T_A=70°C

1.15

0.73

1.15

0.73

°C

Power Dissipation ^B

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

110

150

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

106

R_θJL

Rev5: Mar 2011

www.aosmd.com

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