Datasheet > AO6702

AO6702

更新时间： 2024-10-30 12:51:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体二极管晶体管场效应晶体管
页数	文件大小	规格书
5页	243K
描述
N-Channel Enhancement Mode Field Effect Transistor with Schcttky Diode

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AO6702 数据手册

AO6702

N-Channel Enhancement Mode Field

with Schcttky Diode

Effect Transistor

General Description

The AO6702 uses advanced trench technology to provide

excellent R

_DS(ON)and low gate charge. A Schottky diode is

provided to facilitate the implementation of a bidirectional

blocking switch, or for DC-DC conversion applications.

259 specifications). AO6702L is a Green Product ordering

Standard Product AO6702 is Pb-free (meets ROHS & Sony

option. AO6702 and AO6702L are electrically identical.

Features

V_DS(V) = 20V

I_D= 3.8A (V_GS= 4.5V)

_DS(ON)< 50mΩ (V_GS= 4.5V)

R_DS(ON)< 65mΩ (V_GS= 2.5V)

_DS(ON)< 95mΩ (V_GS= 1.8V)

SCHOTTKY

V_DS(V) = 20V, I_F= 1A, V_F<0.5V@0.5A

N/C

TSOP6

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

MOSFET

Schottky

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

T_A=25°C

T_A=70°C

3.8

I_D

Continuous Drain Current ^A

Pulsed Drain Current ^B

I_DM

V_KA

Schottky reverse voltage

T_A=25°C

T_A=70°C

I_F

I_FM

Continuous Forward Current ^A

Pulsed Forward Current ^B

T_A=25°C

T_A=70°C

1.15

0.7

0.92

0.59

P_D

°C

Power Dissipation

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Parameter: Thermal Characteristics MOSFET

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient ^A

80.3

110

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

°C/W

117

150

R_θJL

Thermal Characteristics Schottky

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

t ≤ 10s

109.4

135

R_θJA

R_θJL

Steady-State

136.5

58.5

175

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