AO6704L

更新时间： 2024-10-30 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体肖特基二极管晶体管场效应晶体管
页数	文件大小	规格书
5页	168K
描述
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

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技术参数
数据手册

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AO6704L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.8

AO6704L 数据手册

AO6704

N-Channel Enhancement Mode Field Effect Transistor

with Schottky Diode

General Description

Features

V_DS(V) = 30V

The AO6704 uses advanced trench technology to

provide excellent R _DS(ON)and low gate charge. A

Schottky diode is provided to facilitate the

implementation of a bidirectional blocking switch, or

for DC-DC conversion applications. Standard Product

AO6704 is Pb-free (meets ROHS & Sony 259

specifications). AO6704L is a Green Product ordering

option. AO6704 and AO6704L are electrically

identical.

I_D= 3.6A (V_GS= 10V)

R_DS(ON)< 65mΩ (V_GS= 10V)

R_DS(ON)< 75mΩ (V_GS= 4.5V)

R_DS(ON)< 160mΩ (V_GS= 2.5V)

SCHOTTKY

V_DS(V) = 20V, I_F= 1A, V_F<0.5V@0.5A

TSOP6

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

MOSFET

Schottky

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

3.6

T_A=25°C

T_A=70°C

I_D

Continuous Drain Current

2.9

I_DM

Pulsed Drain Current

V_KA

Schottky reverse voltage

1.5

T_A=25°C

T_A=70°C

I_F

I_FM

Continuous Forward Current

Pulsed Forward Current

T_A=25°C

T_A=70°C

1.39

0.89

0.78

0.5

P_D

°C

Power Dissipation

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Parameter: Thermal Characteristics MOSFET

Symbol

Typ

Max

Units

t ≤ 10s

Maximum Junction-to-Ambient

R_θJA

Steady-State

°C/W

102

130

R_θJL

Maximum Junction-to-Lead

Thermal Characteristics Schottky

t ≤ 10s

Maximum Junction-to-Ambient

129

160

R_θJA

R_θJL

Steady-State

Maximum Junction-to-Ambient

158

200

Maximum Junction-to-Lead

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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