AO6801E

更新时间： 2024-10-30 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	308K
描述
30V Dual P-Channel MOSFET

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技术参数
数据手册

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AO6801E 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.77
Base Number Matches：	1

AO6801E 数据手册

AO6801E

30V Dual P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AO6801E combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-4.5V)

R_DS(ON)(at V_GS=-2.5V)

-2A

< 110mΩ

< 135mΩ

< 185mΩ

Typical ESD protection

HBM Class 1C

TSOP6

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

-30

±12

V_GS

T_A=25°C

T_A=70°C

-2.0

Continuous Drain

Current

I_D

-1.6

Pulsed Drain Current ^C

I_DM

P_D

-15

T_A=25°C

T_A=70°C

0.70

°C

Power Dissipation ^B

0.45

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

180

230

180

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

150

185

150

R_θJA

Steady-State

R_θJL

Rev 0: April 2012

www.aosmd.com

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