AO6801A

更新时间： 2024-09-15 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	336K
描述
30V Dual P-Channel MOSFET

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技术参数
数据手册

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AO6801A 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.8
Base Number Matches：	1

AO6801A 数据手册

AO6801A

30V Dual P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AO6801A uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-4.5V)

R_DS(ON)(at V_GS=-2.5V)

-2.3A

< 115mΩ

< 150mΩ

< 200mΩ

TSOP6

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-30

Gate-Source Voltage

V_GS

±12

-2.3

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

-2

I_DM

P_D

-11

T_A=25°C

T_A=70°C

1.15

°C

Power Dissipation ^B

0.73

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

110

150

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

106

R_θJA

Steady-State

R_θJL

Rev 0: Dec. 2011

www.aosmd.com

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