Datasheet > AO6605

AO6605

更新时间： 2024-11-27 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	185K
描述
Complementary Enhancement Mode Field Effect Transistor

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AO6605 数据手册

AO6605

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 20V

p-channel

-20V

The AO6605 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The

complementary MOSFETs form a high-speed power

inverter, suitable for a multitude of applications.

Standard Product AO6605 is Pb-free (meets ROHS &

Sony 259 specifications). AO6605L is a Green

Product ordering option. AO6605 and AO6605L are

electrically identical.

I_D= 1.9A (V_GS= 4.5V) -2.5A

R_DS(ON)

< 200mΩ

< 270mΩ

< 400mΩ

< 97mΩ (V_GS= 4.5V)

< 130mΩ (V_GS= 2.5V)

< 190mΩ (V_GS= 1.8V)

TSOP6

Top View

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

±8

-20

±8

V_GS

T_A=25°C

T_A=70°C

1.7

-2.5

Continuous Drain

Current ^A

Pulsed Drain Current ^B

I_D

1.4

-2.0

I_DM

-15

T_A=25°C

T_A=70°C

1.15

0.73

-55 to 150

1.15

P_D

Power Dissipation

0.73

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Typ

Max

110

150

Units

Maximum Junction-to-Ambient ^A

°C/W

t ≤ 10s

R_θJA

R_θJL

Maximum Junction-to-Ambient ^A

106

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

中文翻译

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