是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | Reach Compliance Code: | compliant |
风险等级: | 5.82 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 1.7 A |
最大漏极电流 (ID): | 1.7 A | 最大漏源导通电阻: | 0.225 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 14 pF |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
功耗环境最大值: | 1.15 W | 最大功率耗散 (Abs): | 1.15 W |
最大脉冲漏极电流 (IDM): | 15 A | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AO6603L | AOS |
获取价格 |
Complementary Enhancement Mode Field Effect Transistor | |
AO6604 | FREESCALE |
获取价格 |
N & P-Channel 20-V (D-S) MOSFET High performance trench technology | |
AO6604 | AOS |
获取价格 |
20V Complementary MOSFET | |
AO6604 | UMW |
获取价格 |
种类:N+P-Channel;漏源电压(Vdss):N: 20V;P:-20V;持续漏极电 | |
AO6604L | ETC |
获取价格 |
Complementary Enhancement Mode Field Effect Transistor | |
AO6605 | AOS |
获取价格 |
Complementary Enhancement Mode Field Effect Transistor | |
AO6605L | AOS |
获取价格 |
Complementary Enhancement Mode Field Effect Transistor | |
AO6700 | AOS |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode | |
AO6700L | AOS |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode | |
AO6701 | AOS |
获取价格 |
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |