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AO6603 PDF预览

AO6603

更新时间: 2024-10-30 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 281K
描述
Complementary Enhancement Mode Field Effect Transistor

AO6603 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
风险等级:5.82配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):1.7 A
最大漏极电流 (ID):1.7 A最大漏源导通电阻:0.225 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):14 pF
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL AND P-CHANNEL
功耗环境最大值:1.15 W最大功率耗散 (Abs):1.15 W
最大脉冲漏极电流 (IDM):15 A表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON

AO6603 数据手册

 浏览型号AO6603的Datasheet PDF文件第2页浏览型号AO6603的Datasheet PDF文件第3页浏览型号AO6603的Datasheet PDF文件第4页浏览型号AO6603的Datasheet PDF文件第5页浏览型号AO6603的Datasheet PDF文件第6页浏览型号AO6603的Datasheet PDF文件第7页 
AO6603  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
n-channel  
VDS (V) = 20V  
ID = 1.7 (VGS = 4.5V) -2.5A  
RDS(ON)  
p-channel  
-30V  
The AO6603 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. The  
complementary MOSFETs form a high-speed power  
inverter, suitable for a multitude of applications.  
Standard Product AO6603 is Pb-free (meets ROHS  
& Sony 259 specifications). AO6603L is a Green  
Product ordering option. AO6603 and AO6603L are  
electrically identical.  
< 225m(VGS = 4.5V) < 135m(VGS = -10V)  
< 290m(VGS = 2.5V) < 185m(VGS = 2.5V)  
< 425m(VGS = 1.8V) < 265m(VGS = 1.8V)  
D2  
S2  
D1  
S1  
TSOP6  
Top View  
G1  
G2  
1
2
3
6
5
4
G1  
S2  
G2  
D1  
S1  
D2  
n-channel  
p-channel  
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Parameter  
Symbol  
Max n-channel  
Max p-channel Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
20  
±8  
-30  
±12  
V
V
VGS  
TA=25°C  
TA=70°C  
1.7  
-2.3  
A
ID  
1.4  
-1.8  
Pulsed Drain CurrentB  
IDM  
15  
-30  
TA=25°C  
TA=70°C  
1.15  
0.73  
-55 to 150  
1.15  
PD  
W
Power Dissipation  
0.73  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Typ  
Max  
110  
150  
80  
Units  
Maximum Junction-to-AmbientA  
78  
106  
64  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Maximum Junction-to-AmbientA  
Steady-State  
Maximum Junction-to-LeadC  
Steady-State  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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