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AO6604 PDF预览

AO6604

更新时间: 2024-11-25 12:52:15
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
7页 465K
描述
N & P-Channel 20-V (D-S) MOSFET High performance trench technology

AO6604 数据手册

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AO6604 /MC6604  
Freescale  
N & P-Channel 20-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) ()  
ID (A)  
3.7  
These miniature surface mount MOSFETs  
utilize a high cell density trench process to  
provide low rDS(on) and to ensure minimal  
power loss and heat dissipation. Typical  
applications are DC-DC converters and  
power management in portable and  
battery-powered products such as  
0.058 @ VGS = 4.5V  
0.082 @ VGS = 2.5V  
0.160 @ VGS = 1.8V  
0.112 @ VGS = -4.5V  
0.172 @ VGS = -2.5V  
20  
3.1  
2.2  
-2.7  
-2.2  
-20  
computers, printers, PCMCIA cards,  
cellular and cordless telephones.  
0.210 @ VGS = -1.8V  
D1  
-2.0  
S2  
TSOP-6  
Top View  
Low rDS(on) provides higher efficiency and  
extends battery life  
G2  
G1  
S2  
G2  
1
2
3
6
5
4
D1  
S1  
D2  
G1  
Low thermal impedance copper leadframe  
TSOP-6 saves board space  
S1  
D2  
N-Channel MOSFET  
P-Channel MOSFET  
Fast switching speed  
High performance trench technology  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter Symbol N-Channel P-Channel Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
20  
12  
-20  
12  
V
TA=25oC  
TA=70oC  
-2.7  
-2.1  
-8  
3.7  
Continuous Drain Currenta  
ID  
A
2.9  
8
Pulsed Drain Currentb  
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
TA=25oC  
-1.05  
1.05  
A
1.15  
Power Dissipationa  
PD  
W
TA=70oC  
0.7  
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
-55 to 150  
THERMAL RESISTANCE RATINGS  
N-Channel  
P-Channel  
Parameter  
Symbol  
Unit  
Typ  
Max  
110  
Typ  
93  
Max  
110  
t <= 10 sec  
93  
Maximum Junction-to-Ambienta  
oC/W  
RthJA  
Steady State  
130  
150  
130  
150  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
www.freescale.net.cn  
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