Datasheet > AO6700

AO6700

更新时间： 2024-11-25 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体肖特基二极管晶体管场效应晶体管
页数	文件大小	规格书
4页	110K
描述
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

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AO6700 数据手册

AO6700

N-Channel Enhancement Mode Field Effect Transistor

with Schottky Diode

General Description

Features

V_DS(V) = 20V

The AO6700 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. A Schottky diode is

provided to facilitate the implementation of a bidirectional

blocking switch, or for DC-DC conversion applications.

Standard Product AO6700 is Pb-free (meets ROHS & Sony

259 specifications). AO6700L is a Green Product ordering

option. AO6700 and AO6700L are electrically identical.

I_D= 4.1A (V_GS= 4.5V)

R_DS(ON)< 50mΩ (V_GS= 4.5V)

R_DS(ON)< 65mΩ (V_GS= 2.5V)

R_DS(ON)< 95mΩ (V_GS= 1.8V)

SCHOTTKY

_DS(V) = 20V, I_F= 1A, V_F<0.5V@0.5A

TSOP6

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

MOSFET

Schottky

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

T_A=25°C

T_A=70°C

4.1

I_D

Continuous Drain Current ^A

Pulsed Drain Current ^B

3.3

I_DM

V_KA

Schottky reverse voltage

T_A=25°C

T_A=70°C

1.5

I_F

I_FM

Continuous Forward Current ^A

Pulsed Forward Current ^B

T_A=25°C

T_A=70°C

1.39

0.89

0.78

0.5

P_D

°C

Power Dissipation

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Parameter: Thermal Characteristics MOSFET

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

°C/W

102

130

R_θJL

Thermal Characteristics Schottky

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

t ≤ 10s

129

160

R_θJA

R_θJL

Steady-State

158

200

12 3 4

中文翻译

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