Datasheet > AO6601_12

AO6601_12

更新时间： 2024-10-30 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
9页	482K
描述
30V Complementary MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AO6601_12 数据手册

AO6601

30V Complementary MOSFET

General Description

Product Summary

The AO6601 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The

complementary MOSFETs form a high-speed power

inverter, suitable for a multitude of applications.

N-Channel

P-Channel

V_DS= 30V

-30V

I_D= 3.4A (V_GS=10V)

R_DS(ON)

-2.3A (V_GS=-10V)

R_DS(ON)

< 60mꢀ (V_GS=10V)

< 70mꢀ (V_GS=4.5V)

< 90mꢀ (V_GS=2.5V)

< 115mꢀ (VGS=-10V)

< 150mꢀ (VGS=-4.5V)

< 200mꢀ (VGS=-2.5V)

TSOP6

Top View

Bottom View

Top View

Pin1

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Max n-channel

Max p-channel

Units

Drain-Source Voltage

Gate-Source Voltage

±12

3.4

-30

±12

-2.3

-1.8

-15

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

2.7

I_DM

P_D

T_A=25°C

T_A=70°C

1.15

0.73

1.15

0.73

°C

Power Dissipation ^B

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

110

150

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

106

R_θJL

Rev 6: Dec. 2012

www.aosmd.com

Page 1 of 9

12 3 4 5 6 7...9

中文翻译

下载PDF

与AO6601_12相关器件

型号	品牌	获取价格	描述	数据表
AO6601L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6602	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6602	FREESCALE	获取价格	30V Complementary MOSFET
AO6602_11	AOS	获取价格	30V Complementary MOSFET
AO6602L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6603	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6603L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6604	FREESCALE	获取价格	N & P-Channel 20-V (D-S) MOSFET High performance trench technology
AO6604	AOS	获取价格	20V Complementary MOSFET
AO6604	UMW	获取价格	种类:N+P-Channel;漏源电压（Vdss）:N: 20V；P：-20V;持续漏极电