Datasheet > AO6601_12

AO6601_12

更新时间： 2024-11-25 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
9页	482K
描述
30V Complementary MOSFET

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AO6601_12 数据手册

AO6601

30V Complementary MOSFET

General Description

Product Summary

The AO6601 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The

complementary MOSFETs form a high-speed power

inverter, suitable for a multitude of applications.

N-Channel

P-Channel

V_DS= 30V

-30V

I_D= 3.4A (V_GS=10V)

R_DS(ON)

-2.3A (V_GS=-10V)

R_DS(ON)

< 60mꢀ (V_GS=10V)

< 70mꢀ (V_GS=4.5V)

< 90mꢀ (V_GS=2.5V)

< 115mꢀ (VGS=-10V)

< 150mꢀ (VGS=-4.5V)

< 200mꢀ (VGS=-2.5V)

TSOP6

Top View

Bottom View

Top View

Pin1

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Max n-channel

Max p-channel

Units

Drain-Source Voltage

Gate-Source Voltage

±12

3.4

-30

±12

-2.3

-1.8

-15

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

2.7

I_DM

P_D

T_A=25°C

T_A=70°C

1.15

0.73

1.15

0.73

°C

Power Dissipation ^B

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

110

150

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

106

R_θJL

Rev 6: Dec. 2012

www.aosmd.com

Page 1 of 9

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