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AO4435 PDF预览

AO4435

更新时间: 2024-10-31 17:15:11
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
5页 946K
描述
种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C时):-12A;Vgs(th)(V):±20;漏源导通电阻:20mΩ@-10V

AO4435 数据手册

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R
UMW  
AO4435  
- 30V P-Channel Enhancement Mode MOSFET  
Description  
AO4435  
The  
uses advanced trench technology  
to provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 2.5V. This  
device is suitable for use as a  
Battery protection or in other Switching application.  
General Features  
-
-
VDS = 30V ID = 12A  
RDS(ON) < 20mΩ @ VGS=10V  
Application  
Battery protection  
Load switch  
Uninterruptible power supply  
Absolute Maximum Ratings (Tc=25unless otherwise noted )  
Symbol Parameter  
Rating  
- 30  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
A
VGS  
+ 20  
-12  
Drain Current3, VGS @ 10V  
ID@TA=25  
Drain Current3, VGS @ 10V  
-10  
A
ID@TA=70℃  
IDM  
Pulsed Drain Current1  
Total Power Dissipation  
-50  
2.5  
A
W
PD@TA=25℃  
Linear Derating Factor  
0.02  
W/℃  
Storage Temperature Range  
-55 to 150  
-55 to 150  
50  
TSTG  
TJ  
Operating Junction Temperature Range  
Maximum Thermal Resistance, Junction-ambient3  
Rthj-a  
/W  
www.umw-ic.com  
1
UTD Semiconductor Co.,Limited  

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