Datasheet > AO4435

AO4435

更新时间： 2024-11-18 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管开关光电二极管
页数	文件大小	规格书
5页	405K
描述
30V P-Channel MOSFET

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AO4435 数据手册

AO4435

30V P-Channel MOSFET

General Description

The AO4435 uses advanced trench technology to

provide excellent R_DS(ON), and ultra-low low gate charge

a load switch or in PWM applications.

with a 25V gate rating. This device is suitable for use as

Features

V_DS= -30V

I_D= -10.5A

(V_GS= -20V)

R_DS(ON)< 14mꢀ (V_GS= -20V)

R_DS(ON)< 18mꢀ (V_GS= -10V)

R_DS(ON)< 36mꢀ (V_GS= -5V)

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

-30

Gate-Source Voltage

Continuous Drain

Current ^A

V_GS

±25

-10.5

-8

T_A=25°C

T_A=70°C

I_D

Pulsed Drain Current ^B

I_DM

-80

T_A=25°C

T_A=70°C

3.1

Power Dissipation ^A

Avalanche Current ^B

P_D

2.0

I_AR

-20

°C

Repetitive avalanche energy 0.3mH ^B

E_AR

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady State

R_θJL

1/5

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与AO4435相关器件

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