Datasheet > AO3434

AO3434

更新时间： 2024-10-15 18:10:07

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	492K
描述
SOT-23

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中文翻译

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数据手册

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AO3434 数据手册

AO3434

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 Ultra low on-resistance:V_DS=30V,R_DS(ON)≤52mΩ@V_GS=10V,I_D=4.2A

 ESD protected

 For Load switch and PWM applications

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0



Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

V_DS

V_GS

I_D

Value

±20

3.5

2.8

Unit

Gate-source voltage

TA=25°C

TA=70°C

Continuous drain current

I_D

Pulsed drain current

IDM

TA=25°C

P_D

1.0

0.64

125

°C/W

°C

Power dissipation

TA=70°C

Thermal resistance from Junction to ambient

Junction temperature

R_θJA

150

-55 ~+150

Storage temperature

TSTG

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

V(BR)DSS

V =0V, I =250uA

I_DSS

I_GSS

V_GS(th)

uA V_DS=30V,

VGS=0V

±10

1.8

V_DS=0V,

V =±16V

1.32

8.5

269

2.6

5.5

15.2

3.7

5.7

1.37

0.65

0.77

VDS=VGS, ID=250μA

VGS=10V, ID=4.2A

VGS=10V, ID=4.2A,TJ=125°C

VGS=4.5V, ID=2A

VDS=5V, ID=4.2A

VGS=0V, VDS=0V, f=1MHz

mΩ

Drain-source on-resistance

R_DS(ON)*

g_FS

R_g

Forward transconductance

Gate resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Total gate charge

Gate-source charge

Gate-drain charge

Diode forward voltage

Diode forward current

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

1.5

340

C_iss

C_oss

C_rss

t_d(on)

t_r

t_d(off)

t_f

Q_g

Q_gs

Q_gd

V_SD

I_S

t_rr

Q_rr

V_{DS=15V, VGS=0V, f=1MHz}

3.8

5.5

7.2

nS VDS=15V, VGS=10V,

RGEN=3Ω, RL=3.6Ω

nC VDS=15V,VGS=10V,ID=4.2A

nS IF=4.2A, dI/dt=100A/us

nC IF=4.2A, dI/dt=100A/us

1.8

IS=1A, VGS=0V

15.5

7.1

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

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