Datasheet > AO3460

AO3460

更新时间： 2024-10-15 18:09:35

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	507K
描述
SOT-23

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中文翻译

获取价格

数据手册

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AO3460 数据手册

AO3460

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 V_DS=60V,R_DS(ON)≤1.7Ω@V_GS=10V,I_D=1A

 Low gate charge and ESD protected

 For load switching, low current inverters and

low current DC-DC converters applications

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

V_DS

V_GS

I_D

Value

±20

0.65

0.5

Unit

Gate-source voltage

TA=25°C

TA=70°C

Continuous drain current

I_D

Pulsed drain current

IDM

1.6

TA=25°C

P_D

1.4

0.9

125

150

°C/W

°C

Power dissipation

TA=70°C

Thermal resistance from Junction to ambient

Junction temperature

R_θJA

Storage temperature

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

VGS=0V, ID=250μA

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

V(BR)DSS*

I_DSS

I_GSS

V_GS(th)

±10

2.5

1.7

μA V_DS=60V,

V =0V

V_DS=0V,

V =±20V

2.2

1.4

2.5

1.6

V =V , I =250μA

VGS=10V, ID=0.65A

VGS=10V,ID=0.65A,TJ=125°C

Drain-source on-resistance

R_DS(ON)

V =4.5V, I =0.5A

I_D(ON)

g_FS

R_g

C_iss

C_oss

C_rss

t_d(on)

t_r

t_d(off)

t_f

Q_g

Q_gs

Q_gd

V_SD

I_S

1.6

V_DS=5V, VGS=10V

VDS=5V, ID=0.65A

VGS=0V, VDS=0V, f=1MHz

On-State Drain Current

Forward transconductance

Gate resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Total gate charge

Gate-source charge

Gate-drain charge

Diode forward voltage

Diode forward current

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

0.8

250

5.3

2.8

19.7

5.5

0.8

0.17

0.2

0.8

400

1.2

V_{DS=30V, VGS=0V, f=1MHz}

nS VDS=30V, VGS=10V,

RGEN=3Ω, RL=75Ω

VDS=30V,VGS=10V,ID=0.65A

IS=1A, VGS=0V

t_rr

Q_rr

11.3

7.5

I =0.65A dI/dt=100A/us,

VGS=9V

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

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