Datasheet > AO3701

AO3701

更新时间： 2024-09-27 03:18:55

品牌	Logo	应用领域
美国万代 - AOS		晶体肖特基二极管晶体管场效应晶体管
页数	文件大小	规格书
5页	128K
描述
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

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AO3701 数据手册

AO3701

P-Channel Enhancement Mode Field Effect Transistor

with Schottky Diode

General Description

Features

V_DS(V) = -20V

The AO3701 uses advanced trench technology to provide

excellent R _DS(ON)and low gate charge. A Schottky diode is

provided to facilitate the implementation of a bidirectional

blocking switch, or for DC-DC conversion applications. It is

ESD protected. Standard Product AO3701 is Pb-free (meets

ROHS & Sony 259 specifications). AO3701L is a Green

Product ordering option. AO3701 and AO3701L are

electrically identical.

I_D= -3A (V_GS= -10V)

R_DS(ON)< 80mΩ (V_GS= -10V)

R_DS(ON)< 100mΩ (V_GS= -4.5V)

R_DS(ON)< 145mΩ (V_GS= -2.5V)

ESD Rating: 2000V HBM

SCHOTTKY

V_DS(V) = 20V, I_F= 1A, V_F<0.5V@0.5A

SOT-23-5

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

MOSFET

Schottky

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

-20

V_GS

±12

-3

T_A=25°C

T_A=70°C

I_D

Continuous Drain Current

-2.3

-10

I_DM

Pulsed Drain Current

V_KA

Schottky reverse voltage

T_A=25°C

T_A=70°C

I_F

I_FM

Continuous Forward Current

Pulsed Forward Current

T_A=25°C

T_A=70°C

1.14

0.72

0.92

0.59

P_D

°C

Power Dissipation

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Parameter: Thermal Characteristics MOSFET

Symbol

Typ

Max

Units

t ≤ 10s

Maximum Junction-to-Ambient

80.3

110

R_θJA

Steady-State

°C/W

117

150

R_θJL

Maximum Junction-to-Lead

Thermal Characteristics Schottky

t ≤ 10s

Maximum Junction-to-Ambient

109.4

135

R_θJA

R_θJL

Steady-State

Maximum Junction-to-Ambient

136.5

58.5

175

Maximum Junction-to-Lead

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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