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AO3705 PDF预览

AO3705

更新时间: 2024-02-06 09:54:57
品牌 Logo 应用领域
美国万代 - AOS 晶体肖特基二极管晶体管场效应晶体管
页数 文件大小 规格书
5页 151K
描述
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO3705 数据手册

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AO3705  
P-Channel Enhancement Mode Field Effect Transistor  
with Schottky Diode  
General Description  
Features  
The AO3705/L uses advanced trench technology to  
provide excellent RDS(ON), low gate charge. A Schottky  
diode is provided to facilitate the implementation of a  
bidirectional blocking switch, or for buck convertor  
applications.  
AO3705 and AO3705L are electrically identical.  
-RoHs Complaint  
-AO3705L is Halogen Free  
VDS (V) = -20V  
ID = -3.2A  
(VGS = -4.5V)  
RDS(ON) < 70m(VGS = -4.5V)  
RDS(ON) < 90m(VGS = -2.5V)  
RDS(ON) < 110m(VGS = -1.8V)  
RDS(ON) < 130m(VGS = -1.5V)  
SCHOTTKY  
VDS (V) = 20V, IF = 1A, VF<0.45V@1A  
D
SOT-23-5  
Top View  
K
1
2
3
5
4
G
S
A
D
K
G
S
A
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
MOSFET  
Schottky  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
-20  
V
V
VGS  
±8  
TA=25°C  
-3.2  
ID  
A
Continuous Drain Current  
TA=70°C  
A
-2.5  
-25  
Pulsed Drain Current B  
IDM  
VKA  
Schottky reverse voltage  
20  
1
V
A
TA=25°C  
TA=70°C  
IF  
IFM  
Continuous Forward Current A  
Pulsed Forward Current B  
0.5  
10  
TA=25°C  
TA=70°C  
1.15  
0.7  
0.66  
0.42  
PD  
W
°C  
Power Dissipation  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
Parameter: Thermal Characteristics MOSFET  
Symbol  
Typ  
Max  
Units  
A
t 10s  
Maximum Junction-to-Ambient  
80.3  
110  
RθJA  
A
Steady-State  
Steady-State  
°C/W  
°C/W  
Maximum Junction-to-Ambient  
Maximum Junction-to-Lead C  
117  
43  
150  
80  
RθJL  
Thermal Characteristics Schottky  
A
t 10s  
Maximum Junction-to-Ambient  
153  
190  
RθJA  
RθJL  
A
Steady-State  
Steady-State  
Maximum Junction-to-Ambient  
Maximum Junction-to-Lead C  
173  
103  
220  
140  
Alpha Omega Semiconductor, Ltd.  
www.aosmd.com  

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