Datasheet > AO3705

AO3705

更新时间： 2024-11-18 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体肖特基二极管晶体管场效应晶体管
页数	文件大小	规格书
5页	151K
描述
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

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AO3705 数据手册

AO3705

P-Channel Enhancement Mode Field Effect Transistor

with Schottky Diode

General Description

Features

The AO3705/L uses advanced trench technology to

provide excellent R_DS(ON), low gate charge. A Schottky

diode is provided to facilitate the implementation of a

bidirectional blocking switch, or for buck convertor

applications.

AO3705 and AO3705L are electrically identical.

-RoHs Complaint

-AO3705L is Halogen Free

V_DS(V) = -20V

I_D= -3.2A

(V_GS= -4.5V)

R_DS(ON)< 70mΩ (V_GS= -4.5V)

R_DS(ON)< 90mΩ (V_GS= -2.5V)

R_DS(ON)< 110mΩ (V_GS= -1.8V)

R_DS(ON)< 130mΩ (V_GS= -1.5V)

SCHOTTKY

V_DS(V) = 20V, I_F= 1A, V_F<0.45V@1A

SOT-23-5

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

MOSFET

Schottky

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

-20

V_GS

±8

T_A=25°C

-3.2

I_D

Continuous Drain Current

T_A=70°C

-2.5

-25

Pulsed Drain Current ^B

I_DM

V_KA

Schottky reverse voltage

T_A=25°C

T_A=70°C

I_F

I_FM

Continuous Forward Current ^A

Pulsed Forward Current ^B

0.5

T_A=25°C

T_A=70°C

1.15

0.7

0.66

0.42

P_D

°C

Power Dissipation

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Parameter: Thermal Characteristics MOSFET

Symbol

Typ

Max

Units

t ≤ 10s

Maximum Junction-to-Ambient

80.3

110

R_θJA

Steady-State

°C/W

Maximum Junction-to-Ambient

Maximum Junction-to-Lead ^C

117

150

R_θJL

Thermal Characteristics Schottky

t ≤ 10s

Maximum Junction-to-Ambient

153

190

R_θJA

R_θJL

Steady-State

Maximum Junction-to-Ambient

Maximum Junction-to-Lead ^C

173

103

220

140

Alpha Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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