Datasheet > AO3703

AO3703

更新时间： 2024-01-10 12:32:27

品牌	Logo	应用领域
美国万代 - AOS		晶体肖特基二极管晶体管场效应晶体管
页数	文件大小	规格书
4页	108K
描述
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

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技术参数
数据手册

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AO3703 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

AO3703 数据手册

AO3703

P-Channel Enhancement Mode Field Effect Transistor

with Schottky Diode

General Description

Features

V_DS(V) = -20V

The AO3703 uses advanced trench technology to provide

excellent R _DS(ON)and low gate charge. A Schottky diode is

provided to facilitate the implementation of a bidirectional

blocking switch, or for DC-DC conversion applications.

Standard Product AO3703 is Pb-free (meets ROHS & Sony

259 specifications). AO3703L is a Green Product ordering

option. AO3703 and AO3703L are electrically identical.

I_D= -2.7 A (VGS = -10V)

R_DS(ON)< 97mΩ (VGS = -4.5V)

R_DS(ON)< 130mΩ (VGS = -2.5V)

R_DS(ON)< 190mΩ (VGS = -1.8V)

SCHOTTKY

V_DS(V) = 20V, I_F= 1A, V_F<0.5V@0.5A

SOT-23-5

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

MOSFET

-20

Schottky

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

T_A=25°C

T_A=70°C

-2.7

I_D

Continuous Drain Current

-2.1

I_DM

Pulsed Drain Current

-10

V_KA

Schottky reverse voltage

T_A=25°C

T_A=70°C

I_F

I_FM

Continuous Forward Current

Pulsed Forward Current

T_A=25°C

T_A=70°C

1.14

0.72

0.92

0.59

P_D

Power Dissipation

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Parameter: Thermal Characteristics MOSFET

Symbol

Typ

80.3

117

Max

110

150

Units

t ≤ 10s

Maximum Junction-to-Ambient

R_θJA

°C/W

Steady-State

R_θJL

58.5

Maximum Junction-to-Lead

Alpha & Omega Semiconductor, Ltd.

12 3 4

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