Datasheet > AO3702L

AO3702L

更新时间： 2024-02-08 15:26:10

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	136K
描述
N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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AO3702L 数据手册

AO3702

N-Channel Enhancement Mode Field Effect Transistor

with Schottky Diode

General Description

Features

V_DS(V) = 20V

The AO3702/L uses advanced trench technology to provide

excellent R_DS(ON), low gate charge.

A Schottky diode is provided to facilitate the implementation of

a bidirectional blocking switch, or for DC-DC conversion

applications. AO3702 and AO3702L are electrically identical.

-RoHs Complaint

I_D= 3.5A (V_GS= 4.5V)

R_DS(ON)< 62mΩ (V_GS= 4.5V)

R_DS(ON)< 70mΩ (V_GS= 2.5V)

R_DS(ON)< 85mΩ (V_GS= 1.8V)

SCHOTTKY

V_DS(V) = 20V, I_F= 1A, V_F<0.5V@0.5A

-AO3702L is Halogen Free

SOT-23-5

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

MOSFET

Schottky

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

T_A=25°C

T_A=70°C

3.5

I_D

Continuous Drain Current

2.7

I_DM

Pulsed Drain Current

V_KA

Schottky reverse voltage

T_A=25°C

T_A=70°C

I_F

I_FM

Continuous Forward Current

0.5

Pulsed Forward Current

T_A=25°C

T_A=70°C

1.15

0.7

0.66

0.42

P_D

°C

Power Dissipation

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Parameter: Thermal Characteristics MOSFET

Symbol

Typ

Max

Units

t ≤ 10s

Maximum Junction-to-Ambient

80.3

110

R_θJA

Steady-State

°C/W

117

150

R_θJL

Maximum Junction-to-Lead

Thermal Characteristics Schottky

t ≤ 10s

Maximum Junction-to-Ambient

153

190

R_θJA

R_θJL

Steady-State

Maximum Junction-to-Ambient

173

103

220

140

Maximum Junction-to-Lead

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

中文翻译

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