Datasheet > AO3700L

AO3700L

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	120K
描述
Transistor

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技术参数
数据手册

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AO3700L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

AO3700L 数据手册

AO3700

N-Channel Enhancement Mode Field Effect Transistor

with Schottky Diode

General Description

Features

V_DS(V) = 30V

The AO3700 uses advanced trench technology to provide

excellent R _DS(ON)and low gate charge. A Schottky diode is

provided to facilitate the implementation of a bidirectional

blocking switch, or for DC-DC conversion applications.

Standard Product AO3700 is Pb-free (meets ROHS & Sony

259 specifications). AO3700L is a Green Product ordering

option. AO3700 and AO3700L are electrically identical.

I_D= 3.3A (V_GS= 10V)

R_DS(ON)< 65mΩ (V_GS= 10V)

R_DS(ON)< 75mΩ (V_GS= 4.5V)

R_DS(ON)< 160mΩ (V_GS= 2.5V)

SCHOTTKY

V_DS(V) = 20V, I_F= 1A, V_F<0.5V@0.5A

SOT-23-5

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

MOSFET

Schottky

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

3.3

T_A=25°C

T_A=70°C

I_D

Continuous Drain Current

2.6

I_DM

Pulsed Drain Current

V_KA

Schottky reverse voltage

T_A=25°C

T_A=70°C

I_F

I_FM

Continuous Forward Current

Pulsed Forward Current

T_A=25°C

T_A=70°C

1.15

0.7

0.92

0.59

P_D

°C

Power Dissipation

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Parameter: Thermal Characteristics MOSFET

Symbol

Typ

80.3

117

Max

110

150

Units

t ≤ 10s

Maximum Junction-to-Ambient

R_θJA

Steady-State

°C/W

R_θJL

Maximum Junction-to-Lead

Thermal Characteristics Schottky

t ≤ 10s

Maximum Junction-to-Ambient

109.4

136.5

58.5

135

175

R_θJA

R_θJL

Steady-State

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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