Datasheet > AO3481

AO3481

更新时间： 2024-05-23 22:23:15

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
5页	511K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-4A;Vgs(th)(V):±12;漏源导通电阻:50mΩ@-10V

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AO3481 数据手册

AO3481

UMW

-30 V

P-Channel

MOSFET

SOT–23

General Description

The AO3481 provide excellent R_DS(ON), low gate

charge and operation gate voltages as low as

2.5V. This device is suitable for use as a load

switch or other general applications.

1. GATE

2. SOURCE

3. DRAIN

Product Summary

•

V_DS(V) =-30V

I_D=-4.0A (V_GS=-10V)

R_DS(ON)<50mΩ (V _GS=-10V)

R_DS(ON)<60mΩ (V _GS=-4.5V)

•

• RoHS and Halogen-Free Compliant

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-30

Gate-Source Voltage

V_GS

±12

-4

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

-3.2

Pulsed Drain Current ^C

I_DM

P_D

-27

T_A=25°C

T_A=70°C

1.4

Power Dissipation ^B

0.9

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

125

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

100

R_θJL

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5

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