Datasheet > AO3480A

AO3480A

更新时间： 2024-11-19 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	522K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:5.7A;漏源导通电阻:26.5mΩ@10V;漏源导通电阻:32mΩ@4.5V;Vgs(th)(V):±12

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AO3480A 数据手册

UMW

AO3480

N-Channel MOSFET

SOT–23

General Description

The AO3480 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is suitable for use as a

load switch or in PWM applications.

Product Summary

V_DS

30V

1. GATE

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

R_DS(ON)(at V_GS= 2.5V)

5.7A

2. SOURCE

3. DRAIN

< 26.5mΩ

< 32mΩ

< 50mΩ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±12

5.7

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

4.7

Pulsed Drain Current ^C

I_DM

P_D

T_A=25°C

T_A=70°C

1.4

Power Dissipation ^B

0.9

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

125

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

100

R_θJL

www.umw-ic.com

UTD Semiconductor Co.,Limited

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