Datasheet > AO3460_10

AO3460_10

更新时间： 2024-11-18 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	168K
描述
60V N-Channel MOSFET

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AO3460_10 数据手册

AO3460

60V N-Channel MOSFET

General Description

Product Summary

The AO3460 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge, and

operation with gate voltages as low as 4.5V, in the

small SOT-23 footprint. It can be used for a wide

variety of applications, including load switching, low

current inverters and low current DC-DC converters.

It is ESD protected.

V_DS(V) = 60V

I_D= 0.65A (VGS = 10V)

R_DS(ON)< 1.7Ω (V_GS= 10V)

R_DS(ON)< 2Ω (V_GS= 4.5V)

ESD protected

SOT23

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

0.65

T_A=25°C

T_A=70°C

Continuous Drain

Current ^{A, F}

I_D

0.5

Pulsed Drain Current ^B

T_A=25°C

T_A=70°C

I_DM

1.6

1.4

P_D

°C

Power Dissipation ^A

0.9

Junction and Storage Temperature Range T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

100

125

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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