Datasheet > AO3434_10

AO3434_10

更新时间： 2024-01-25 16:01:51

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	174K
描述
30V N-Channel MOSFET

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AO3434_10 数据手册

AO3434

30V N-Channel MOSFET

General Description

Product Summary

The AO3434 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge.

This device is suitable for use as a load switch or

in PWM applications. It is ESD protected.

V_DS(V) = 30V

I_D= 4.2A

(V_GS= 10V)

(V_GS= 4.5V)

R_DS(ON)< 52mΩ

R_DS(ON)< 75mΩ

ESD protected

SOT23

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Maximum

Parameter

Drain-Source Voltage

Symbol 10 sec

V_DS

Steady-State

Units

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

4.2

3.3

3.5

2.8

Continuous Drain

Current ^A,F

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.4

0.9

1.0

P_D

°C

Power Dissipation

0.64

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

100

Max

125

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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