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AO3434A PDF预览

AO3434A

更新时间: 2024-11-20 12:51:27
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 285K
描述
30V N-Channel MOSFET

AO3434A 技术参数

生命周期:Not Recommended包装说明:,
Reach Compliance Code:compliant风险等级:7.59
Is Samacsys:NBase Number Matches:1

AO3434A 数据手册

 浏览型号AO3434A的Datasheet PDF文件第2页浏览型号AO3434A的Datasheet PDF文件第3页浏览型号AO3434A的Datasheet PDF文件第4页浏览型号AO3434A的Datasheet PDF文件第5页 
AO3434A  
30V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
30V  
The AO3434A combines advanced trench MOSFET  
technology with a low resistance package to provide  
extremely low RDS(ON). This device is ideal for load switch  
and battery protection applications.  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS =4.5V)  
RDS(ON) (at VGS =2.5V)  
4A  
< 52m  
< 60mΩ  
< 78mΩ  
Typical ESD protection  
HBM Class 3A  
SOT23  
D
Top View  
Bottom View  
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±12  
4
V
V
VGS  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
ID  
3
A
Pulsed Drain Current C  
IDM  
PD  
20  
1.4  
TA=25°C  
TA=70°C  
W
°C  
Power Dissipation B  
0.9  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
70  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
100  
63  
125  
80  
RθJL  
Rev 1: Sep. 2012  
www.aosmd.com  
Page 1 of 5  

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