Datasheet > AO3442

AO3442

更新时间： 2024-06-27 12:11:49

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	670K
描述
SOT-23

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数据手册

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AO3442 数据手册

AO3442

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 Low on-resistance:V_DS=100V,R_DS(ON)≤630mΩ@V_GS=10V,I_D=1A

 For boost converters and synchronous rectifiers applications

 For power supplies and LED backlighting applications

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

V_DS

V_GS

I_D

Value

100

±20

0.8

Unit

Gate-source voltage

TA=25°C

TA=70°C

Continuous drain current

I_D

Pulsed drain current

IDM

TA=25°C

P_D

1.4

0.9

125

150

-55 ~+150

°C/W

°C

Power dissipation

TA=70°C

Thermal resistance from Junction to ambient

Junction temperature

R_θJA

Storage temperature

TSTG

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

VGS=0V, ID=250uA

uA V_DS=100V,

100

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

V(BR)DSS*

I_DSS

I_GSS

V =0V

±100 nA

V_DS=0V,

V =±20V

V_GS(th)

1.7

2.3

514

983 1200

554

2.9

630

mΩ

V =V , I =250μA

VGS=10V, ID=1A

VGS=10V, ID=1A,TJ=125°C

Drain-source on-resistance

R_DS(ON)

720

7.5

V =4.5V, I =0.8A

I_D(ON)

g_FS

R_g

V_DS=5V, VGS=10V

VDS=5V, ID=1A

VGS=0V, VDS=0V, f=1MHz

On-State Drain Current

Forward transconductance

Gate resistance

2.8

2.5

C_iss

C_oss

C_rss

t_d(on)

t_r

100

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

V_{DS=50V, VGS=0V, f=1MHz}

nS VDS=50V, VGS=10V,

RGEN=3Ω, RL=50Ω

t_d(off)

t_f

Q_g

Q_gs

Q_gd

V_SD

I_S

2.8

0.4

0.8

0.9

Turn-off delay time

Turn-off fall time

Total gate charge

Gate-source charge

VDS=50V,VGS=10V,ID=1A

Gate-drain charge

1.2

Diode forward voltage

Diode forward current

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

IS=1A, VGS=0V

t_rr

Q_rr

nS IF=5.6A, dI/dt=100A/us

nC IF=5.6A, dI/dt=100A/us

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

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