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AO3442

更新时间: 2024-11-18 12:24:23
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 500K
描述
100V N-Channel MOSFET

AO3442 数据手册

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AO3442  
100V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
100V  
The AO3442 combines advanced trench MOSFET  
technology with a low resistance package to provide  
extremely low RDS(ON). This device is ideal for boost  
converters and synchronous rectifiers for consumer,  
telecom, industrial power supplies and LED backlighting.  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS=4.5V)  
1A  
< 630m  
< 720mΩ  
SOT23  
D
Top View  
Bottom View  
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
100  
±20  
1
V
V
VGS  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
ID  
0.8  
A
Pulsed Drain Current C  
IDM  
PD  
4
1.4  
TA=25°C  
TA=70°C  
W
°C  
Power Dissipation B  
0.9  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
70  
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
90  
125  
80  
RθJA  
Steady-State  
Steady-State  
100  
63  
RθJL  
Rev 0: Jun 2012  
www.aosmd.com  
Page 1 of 5  

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