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AO3435 PDF预览

AO3435

更新时间: 2024-11-18 06:37:15
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 134K
描述
P-Channel Enhancement Mode Field Effect Transistor

AO3435 数据手册

 浏览型号AO3435的Datasheet PDF文件第2页浏览型号AO3435的Datasheet PDF文件第3页浏览型号AO3435的Datasheet PDF文件第4页 
AO3435  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO3435/L uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 1.5V. This  
device is suitable for use in buck convertor  
applications.  
VDS = -20V  
ID = -3.5A  
(VGS = -4.5V)  
(VGS =- 4.5V)  
(VGS = -2.5V)  
(VGS = -1.8V)  
(VGS = -1.5V)  
R
R
R
R
DS(ON) < 70mΩ  
DS(ON) < 90mΩ  
DS(ON) < 110mΩ  
DS(ON) < 130mΩ  
AO3435 and AO3435L are electrically identical.  
-RoHS Compliant  
-AO3435L is Halogen Free  
TO-236  
(SOT-23)  
Top View  
D
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Units  
Symbol  
VDS  
10 Sec  
Steady State  
-20  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
V
V
VGS  
±8  
TA=25°C  
TA=70°C  
-3.5  
-2.7  
-2.9  
-2.3  
ID  
A
Pulsed Drain Current B  
IDM  
-25  
TA=25°C  
TA=70°C  
1.4  
0.9  
1
PD  
W
Power Dissipation A  
0.6  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
70  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
100  
63  
125  
80  
Steady-State  
Steady-State  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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