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AM4812M8R PDF预览

AM4812M8R

更新时间: 2024-01-02 20:07:32
品牌 Logo 应用领域
创瑞 - AITSEMI /
页数 文件大小 规格书
8页 472K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

AM4812M8R 数据手册

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AM4812  
AiT Semiconductor Inc.  
www.ait-ic.com  
30V N-CHANNEL ENHANCEMENT MODE  
MOSFET  
ABSOLUTE MAXIMUM RATINGS  
TA = 25°C unless otherwise specified  
VDSS, Drain-Source Voltage  
30V  
±20V  
VGSS, Gate-Source Voltage  
ID, Continuous Drain Current, VGS = 10V NOTE1  
IDM, Pulsed Drain Current NOTE2  
PD, Power Dissipation  
TA=25°C  
10A  
20A  
TA=25°C  
TA=70°C  
3.2W  
2W  
TJ, Operation Junction Temperature  
TSTG, Storage Temperature Range  
-55°C /150°C  
-55°C /150°C  
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at  
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
NOTE1: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.  
Copper, in a still air environment with TA = 25°C.  
NOTE2: The data tested by pulsed , pulse width 300us , duty cycle 2%.  
THERMAL INFORMATION  
Parameter  
Symbol  
RθJA  
Typ  
85  
Unit  
°C/W  
°C/W  
Thermal Resistance-Junction to Ambient  
Thermal Resistance-Junction to Case  
RθJC  
48  
REV1.0  
- JUN 2011 RELEASED –  
- 3 -  

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