Analog Power
AM4844NE
N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V (V)
rDS(on) m( Ω)
ID (A)
8.1
6.9
DS
32 @V = 10V
GS
40
44 @V = 4.5V
GS
SOIC-8
D
S
Top View
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
G
8
7
6
5
D
D
D
D
S
S
S
G
1
2
3
4
•
•
Fast switching speed
High performance trench technology
N-Channel
MOSFET
ESD Protected
2000V
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
40
±20
±8.1
±6.6
±50
2.3
V
o
TA=25 C
Continuous Drain Currenta
Pulsed Drain Currentb
ID
o
A
TA=70 C
IDM
IS
Continuous Source Current (Diode Conduction)a
A
o
TA=25 C
3.1
2.2
a
PD
W
Power Dissipation
o
TA=70 C
oC
Operating Junction and Storage Temperature Range
T, T -55 to 150
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
RθJA
Maximum Units
oC/W
oC/W
t <= 10 sec
Steady State
50
92
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM4844NE_A
PRELIMINARY