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AM4844NE PDF预览

AM4844NE

更新时间: 2022-05-18 19:58:51
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
3页 207K
描述
N-Channel 40-V (D-S) MOSFET

AM4844NE 数据手册

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Analog Power  
AM4844NE  
N-Channel 40-V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize a  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
PRODUCT SUMMARY  
V (V)  
rDS(on) m( )  
ID (A)  
8.1  
6.9  
DS  
32 @V = 10V  
GS  
40  
44 @V = 4.5V  
GS  
SOIC-8  
D
S
Top View  
Low rDS(on) provides higher efficiency and  
extends battery life  
Low thermal impedance copper leadframe  
SOIC-8 saves board space  
G
8
7
6
5
D
D
D
D
S
S
S
G
1
2
3
4
Fast switching speed  
High performance trench technology  
N-Channel  
MOSFET  
ESD Protected  
2000V  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter Symbol Limit Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
40  
±20  
±8.1  
±6.6  
±50  
2.3  
V
o
TA=25 C  
Continuous Drain Currenta  
Pulsed Drain Currentb  
ID  
o
A
TA=70 C  
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
A
o
TA=25 C  
3.1  
2.2  
a
PD  
W
Power Dissipation  
o
TA=70 C  
oC  
Operating Junction and Storage Temperature Range  
T, T -55 to 150  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambienta  
Symbol  
RθJA  
Maximum Units  
oC/W  
oC/W  
t <= 10 sec  
Steady State  
50  
92  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM4844NE_A  
PRELIMINARY  

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