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AM4892N PDF预览

AM4892N

更新时间: 2022-10-09 15:59:28
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
5页 358K
描述
Dual N-Channel 150-V (D-S) MOSFET

AM4892N 数据手册

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Analog Power  
AM4892N  
Dual N-Channel 150-V (D-S) MOSFET  
PRODUCT SUMMARY  
Key Features:  
rDS(on) (mΩ)  
VDS (V)  
150  
ID(A)  
2.3  
Low rDS(on) trench technology  
Low thermal impedance  
Fast switching speed  
255 @ VGS = 10V  
290 @ VGS = 4.5V  
2.2  
Typical Applications:  
White LED boost converters  
Automotive Systems  
Industrial DC/DC Conversion Circuits  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VDS  
Limit  
150  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
±20  
TA=25°C  
TA=70°C  
2.3  
Continuous Drain Current a  
Pulsed Drain Current b  
Continuous Source Current (Diode Conduction) a  
ID  
A
1.8  
IDM  
IS  
10  
2.8  
A
TA=25°C  
TA=70°C  
2.1  
Power Dissipation a  
PD  
W
°C  
1.3  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
-55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol Maximum  
Units  
t <= 10 sec  
Steady State  
62.5  
RθJA  
Maximum Junction-to-Ambient a  
°C/W  
110  
Notes  
a.  
Surface Mounted on 1” x 1” FR4 Board.  
b.  
Pulse width limited by maximum junction temperature  
© Preliminary  
1
Publication Order Number:  
DS_AM4892N_1A  

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