Datasheet > AM4812M8R

AM4812M8R

更新时间： 2022-02-26 12:34:27

品牌	Logo	应用领域
创瑞 - AITSEMI		/
页数	文件大小	规格书
8页	472K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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AM4812M8R 数据手册

AM4812

AiT Semiconductor Inc.

www.ait-ic.com

30V N-CHANNEL ENHANCEMENT MODE

MOSFET

ELECTRICAL CHARACTERISTICS

T_A= 25°C unless otherwise specified

Parameter

Static Parameters

Symbol

Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown

Voltage

V_(BR)DSS

V_GS= 0V, I_D= 250μA

Gate Threshold Voltage

Gate Leakage Current

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 250μA

V_DS= 0V, V_GS= ±20V

V_DS= 24V, V_GS= 0V

T_J= 55°C

1.0

2.5

±100

Zero Gate Voltage Drain

Current

I_DSS

µA

On-State Drain Current

I_D(ON)

V_DS≧ 5V, V_GS= 10V

V_GS= 10V, I_D= 7.8A

Drain-source On-Resistance

R_DS(ON)

mΩ

V_GS= 4.5V, I_D= 5.8A

Source-Drain Diode

Diode Forward Voltage

Dynamic Parameters

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

V_SD

I_S= 2A, V_GS= 0V

0.8

1.2

Q_g

7.2

1.6

_DS= 15V

_GS= 10V

Q_GS

Q_GD

C_iss

C_oss

I_D= 7.8A

570

V_DS= 15V

V_GS= 0V

f = 1MHz

C_rss

t_d(on)

t_r

t_d(off)

t_f

4.2

10.2

_DD= 15V

_GS= 10V

Turn-On Time

Turn-Off Time

I_D= 5A

R_G= 3.3Ω

6.2

REV1.0

- JUN 2011 RELEASED –

- 4 -

1 2 345 6 7 8

中文翻译

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