Datasheet > AM4910N

AM4910N

更新时间： 2024-01-15 22:14:31

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页数	文件大小	规格书
6页	197K
描述
Dual N-Channel 30-V (D-S) MOSFET

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中文翻译

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AM4910N 数据手册

Analog Power

AM4910N

Dual N-Channel 30-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

PRODUCT SUMMARY

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

V_DS(V)

r_DS(on)m(Ω)

I_D(A)

13.5 @ V_GS= 10V

20 @ V_GS= 4.5V

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

SOIC-8 saves board space

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25^oC

T_A=70^oC

8.2

±50

2.3

2.1

1.3

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

^oC

T_A=25^oC

T_A=70^oC

Power Dissipation^a

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_θJC

Maximum Units

Maximum Junction-to-Case^a

^oC/W

t <= 5 sec

Maximum Junction-to-Ambient^a

^oC/W

R_θJA

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM4910_F

PRELIMINARY

12 3 4 5 6

中文翻译

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