Datasheet > AM4835EP

AM4835EP

更新时间： 2022-05-18 20:31:48

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ANALOGPOWER		/
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6页	253K
描述
P-Channel 30-V (D-S) MOSFET

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AM4835EP 数据手册

Analog Power

AM4835EP

P-Channel 30-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

I_D(A)

-9.5

-7.5

19 @ V_GS= -10V

30 @ V_GS= -4.5V

-30

SOIC-8

Top View

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

SOIC-8 saves board space

Fast switching speed

High performance trench technology

P-Channel MOSFET

•

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-30

±25

T_A=25^oC

T_A=70^oC

-9.5

-8.3

±50

-2.1

3.1

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

T_A=25^oC

T_A=70^oC

P_D

2.6

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_θJC

R_θJA

Maximum Units

Maximum Junction-to-Case^a

^oC/W

t <= 5 sec

t <= 10 sec

Maximum Junction-to-Ambient^a

^oC/W

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM4835E_C

PRELIMINARY

12 3 4 5 6

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