Datasheet > AFT21S220W02S

AFT21S220W02S

更新时间： 2024-10-27 01:13:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	488K
描述
RF Power LDMOS Transistors

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AFT21S220W02S 数据手册

Document Number: AFT21S220W02S

Rev. 0, 2/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

These 50 W RF power LDMOS transistors are designed for cellular base

station applications requiring very wide instantaneous bandwidth capability

covering the frequency range of 2110 to 2170 MHz.

AFT21S220W02SR3

AFT21S220W02GSR3



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQ= 1200 mA, P_out= 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.

2110–2170 MHz, 50 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTORS



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

2110 MHz

2140 MHz

2170 MHz

(dB)

18.9

19.1

19.2

(%)

29.8

29.3

28.9

7.2

7.1

7.0

–34.0

–18

–25

–17

NI--780S--2L

AFT21S220W02SR3

Features



Designed for Wide Instantaneous Bandwidth Applications

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation



Able to Withstand Extremely High Output VSWR and Broadband Operating

Conditions

Optimized for Doherty Applications

NI--780GS--2L

AFT21S220W02GSR3



In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.

RF /V

in GS

RF /V

out DS

(Top View)

Figure 1. Pin Connections

AFT21S220W02SR3 AFT21S220W02GSR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...15

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