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AFT21S140W02GSR3 PDF预览

AFT21S140W02GSR3

更新时间: 2024-10-27 01:13:15
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恩智浦 - NXP /
页数 文件大小 规格书
15页 492K
描述
RF Power LDMOS Transistors

AFT21S140W02GSR3 数据手册

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Document Number: AFT21S140W02S  
Rev. 0, 2/2014  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
N--Channel Enhancement--Mode Lateral MOSFETs  
These 32 W RF power LDMOS transistors are designed for cellular base  
station applications requiring very wide instantaneous bandwidth capability  
covering the frequency range of 2110 to 2170 MHz.  
AFT21S140W02SR3  
AFT21S140W02GSR3  
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,  
I
DQ = 800 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01%  
2110–2170 MHz, 32 W AVG., 28 V  
AIRFAST RF POWER LDMOS  
TRANSISTORS  
Probability on CCDF.  
G
Output PAR  
(dB)  
ACPR  
(dBc)  
IRL  
(dB)  
ps  
D
Frequency  
2110 MHz  
2140 MHz  
2170 MHz  
(dB)  
19.0  
19.3  
19.4  
(%)  
33.9  
33.5  
33.2  
6.7  
6.7  
6.7  
--32.4  
--32.6  
--32.7  
-- 1 5  
-- 2 4  
-- 2 2  
NI--780S--2L  
AFT21S140W02SR3  
Features  
Designed for Wide Instantaneous Bandwidth Applications  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
Able to Withstand Extremely High Output VSWR and Broadband Operating  
Conditions  
Optimized for Doherty Applications  
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.  
NI--780GS--2L  
AFT21S140W02GSR3  
RF /V  
in GS  
RF /V  
out DS  
2
1
(Top View)  
Figure 1. Pin Connections  
Freescale Semiconductor, Inc., 2014. All rights reserved.  

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