Datasheet > AFT21H350W03SR6

AFT21H350W03SR6

更新时间： 2024-10-27 01:12:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
18页	544K
描述
RF Power LDMOS Transistors

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AFT21H350W03SR6 数据手册

Document Number: AFT21H350W03S

Rev. 0, 9/2013

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

AFT21H350W03SR6

AFT21H350W04GSR6

N--Channel Enhancement--Mode Lateral MOSFETs

These 63 watt asymmetrical Doherty RF power LDMOS transistors are

designed for cellular base station applications requiring very wide

instantaneous bandwidth capability covering the frequency range of 2110 to

2170 MHz.

2110–2170 MHz, 63 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTORS



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Volts,

I_DQA= 750 mA, V_GSB= 0.7 Vdc, P_out= 63 Watts Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

Frequency

2110 MHz

2140 MHz

2170 MHz

(dB)

16.4

16.5

(%)

47.1

46.3

45.2

7.5

7.4

--26.0

--27.9

--30.1

NI--1230S--4S

AFT21H350W03SR6

Features



Advanced High Performance In--Package Doherty

Designed for Wide Instantaneous Bandwidth Applications

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

NI--1230GS--4L

AFT21H350W04GSR6



Designed for Digital Predistortion Error Correction Systems

In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.

Carrier

RF /V

outA DSA

inA GSA

(1)

RF /V

inB GSB

RF /V

outB DSB

Peaking

(Top View)

Figure 1. Pin Connections

1. Pin connections 1 and 2 are DC coupled

and RF independent.

AFT21H350W03SR6 AFT21H350W04GSR6

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...18

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