Datasheet > ADRF5080

ADRF5080

更新时间： 2024-11-25 15:18:15

品牌	Logo	应用领域
亚德诺 - ADI		开关
页数	文件大小	规格书
15页	2087K
描述
100 MHz至20 GHz反射式硅SP8T开关

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ADRF5080 数据手册

Data Sheet

ADRF5080

Reflective, Silicon SP8T Switch, 100 MHz to 20 GHz

FEATURES

FUNCTIONAL BLOCK DIAGRAM

► Ultrawideband frequency range: 100 MHz to 20 GHz

► Low insertion loss

► 1.3 dB up to 6 GHz

► 1.6 dB up to 12 GHz

► 2.0 dB up to 20 GHz

► High isolation

► 46 dB up to 6 GHz

► 45 dB up to 12 GHz

► 40 dB up to 20 GHz

► High input linearity

► P0.1dB: 33 dBm typical

► IP3: 55 dBm typical

► High RF power handling

► Insertion loss path: 33 dBm

► Hot switching: 30 dBm

► Fast switching on and off time: 55 ns

► 0.1 dB settling time (50% V_CTRLto 0.1 dB final RF_OUT): 100 ns

► Single-supply operation capability

► All off state control

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADRF5080 is a reflective, SP8T switch manufactured in the

silicon process. The ADRF5080 operates from 100 MHz to 20 GHz

with an insertion loss of lower than 2.0 dB and an isolation higher

than 40 dB. The device has an RF input power handling capability

of 30 dBm continuous wave power for the insertion loss path.

► Logic select control

► No low frequency spurs

► 36-terminal, 5.50 mm x 5.50 mm LGA package

The ADRF5080 operates with a dual-supply voltage, +3.3 V and

−3.3 V. The device can also operate with a single-supply voltage

(VDD) applied while the negative supply pin (VSS) is tied to ground.

The single-supply operation condition requires a lower operating

power while the excellent small signal performance is maintained

See Table 2 for details.

APPLICATIONS

► Test and instrumentation

► Military radios, radars, and electronic counter measures (ECMs)

► Microwave radios and very small aperture terminals (VSATs)

The ADRF5080 employs complementary metal-oxide semiconduc-

tor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-com-

patible controls.

The ADRF5080 comes in a 36-terminal, 5.50 mm × 5.50 mm, RoHS

compliant, land grid array (LGA) package and can operate from

−40°C to +105°C.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog

Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to

change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and

registered trademarks are the property of their respective owners.

DOCUMENT FEEDBACK

TECHNICAL SUPPORT

12 3 4 5 6 7...15

中文翻译

下载PDF

与ADRF5080相关器件

型号	品牌	获取价格	描述	数据表
ADRF5130	ADI	获取价格	Low insertion loss
ADRF5130BCPZ	ADI	获取价格	Low insertion loss
ADRF5130BCPZ-R7	ADI	获取价格	Low insertion loss
ADRF5130-EVALZ	ADI	获取价格	Low insertion loss
ADRF5132	ADI	获取价格	High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
ADRF5132BCPZN	ADI	获取价格	High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
ADRF5132BCPZN-R7	ADI	获取价格	High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
ADRF5132-EVALZ	ADI	获取价格	High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
ADRF5141	ADI	获取价格	具有限制器的硅发射和接收开关，6 GHz 至 12 GHz
ADRF5144	ADI	获取价格	1 GHz 至 20 GHz 10 W 平均值硅 SPDT 反射开关

与ADRF5080相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

ADRF5080

ADRF5080 数据手册

与ADRF5080相关器件

与ADRF5080相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ADRF5080

ADRF5080 数据手册

与ADRF5080相关器件

与ADRF5080相关文章

您还可以找

您在本页遇到什么问题？