Datasheet > ADRF5080

ADRF5080

更新时间： 2024-03-03 10:08:50

品牌	Logo	应用领域
亚德诺 - ADI		开关
页数	文件大小	规格书
15页	2087K
描述
100 MHz至20 GHz反射式硅SP8T开关

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ADRF5080 数据手册

Data Sheet

ADRF5080

Reflective, Silicon SP8T Switch, 100 MHz to 20 GHz

FEATURES

FUNCTIONAL BLOCK DIAGRAM

► Ultrawideband frequency range: 100 MHz to 20 GHz

► Low insertion loss

► 1.3 dB up to 6 GHz

► 1.6 dB up to 12 GHz

► 2.0 dB up to 20 GHz

► High isolation

► 46 dB up to 6 GHz

► 45 dB up to 12 GHz

► 40 dB up to 20 GHz

► High input linearity

► P0.1dB: 33 dBm typical

► IP3: 55 dBm typical

► High RF power handling

► Insertion loss path: 33 dBm

► Hot switching: 30 dBm

► Fast switching on and off time: 55 ns

► 0.1 dB settling time (50% V_CTRLto 0.1 dB final RF_OUT): 100 ns

► Single-supply operation capability

► All off state control

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADRF5080 is a reflective, SP8T switch manufactured in the

silicon process. The ADRF5080 operates from 100 MHz to 20 GHz

with an insertion loss of lower than 2.0 dB and an isolation higher

than 40 dB. The device has an RF input power handling capability

of 30 dBm continuous wave power for the insertion loss path.

► Logic select control

► No low frequency spurs

► 36-terminal, 5.50 mm x 5.50 mm LGA package

The ADRF5080 operates with a dual-supply voltage, +3.3 V and

−3.3 V. The device can also operate with a single-supply voltage

(VDD) applied while the negative supply pin (VSS) is tied to ground.

The single-supply operation condition requires a lower operating

power while the excellent small signal performance is maintained

See Table 2 for details.

APPLICATIONS

► Test and instrumentation

► Military radios, radars, and electronic counter measures (ECMs)

► Microwave radios and very small aperture terminals (VSATs)

The ADRF5080 employs complementary metal-oxide semiconduc-

tor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-com-

patible controls.

The ADRF5080 comes in a 36-terminal, 5.50 mm × 5.50 mm, RoHS

compliant, land grid array (LGA) package and can operate from

−40°C to +105°C.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog

Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to

change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and

registered trademarks are the property of their respective owners.

DOCUMENT FEEDBACK

TECHNICAL SUPPORT

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ADRF5132BCPZN-R7	ADI	获取价格	High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
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