Data Sheet
ADRF5345
High Linearity, Silicon SP4T Switch, 1.8 GHz to 3.8 GHz
FEATURES
FUNCTIONAL BLOCK DIAGRAM
► Reflective design
► Low Insertion Loss
► 0.35 dB to 2.8 GHz typical
► 0.40 dB to 3.8 GHz typical
► High power handling at TCASE = 105°C
► Long-term (>10 years) average
► Continuous wave power: 39 dBm
► LTE signal
► Average power: 39 dBm
► Peak power: 49 dBm
► High input linearity, IP3: 84 dBm typical
► ESD ratings
Figure 1.
► HBM: 2000 V, Class 2
► CDM: 1000 V, Class C3
GENERAL DESCRIPTION
► Single-supply operation, integrated NVG
► Positive control, LVCMOS-/LVTTL- compatible
► 4 mm x 4 mm, 22-terminal LGA package
The ADRF5345 is a high linearity, reflective, single-pole, four-throw
(SP4T) switch manufactured in the silicon process.
The ADRF5345 operates from 1.8 GHz to 3.8 GHz with a typical
insertion loss lower than 0.40 dB and a typical input IP3 of 84 dBm.
The device has an RF input power handling capability of 39 dBm for
continuous wave signals and 39 dBm average and 49 dBm peak for
long-term evolution (LTE) signals.
APPLICATIONS
► 5G antenna tilting
► Wireless infrastructure
► Military and high reliability applications
► Test equipment
The ADRF5345 incorporates an integrated negative voltage gener-
ator (NVG) to operate with a single positive supply of 5 V (VDD
)
applied to the VDD pin drawing a 2 mA supply current. The device
employs low voltage complementary metal-oxide semiconductor
(LVCMOS)-/low voltage transistor to transistor logic (LVTTL)- com-
patible controls.
► Pin diode replacement
The ADRF5345 comes in a 4 mm × 4 mm, 22-terminal, RoHS-com-
pliant, land grid array (LGA) package and operates between −40°C
to +105°C.
Rev. 0
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