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ADRF5473BCZ-SX

更新时间: 2024-11-28 02:51:43
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亚德诺 - ADI /
页数 文件大小 规格书
17页 1415K
描述
Die on Carrier, Silicon Digital Attenuator, 0.5 dB LSB, 6-Bit, 100 MHz to 40 GHz

ADRF5473BCZ-SX 数据手册

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Data Sheet  
ADRF5473  
Die on Carrier, Silicon Digital Attenuator, 0.5 dB LSB, 6-Bit, 100 MHz to 40 GHz  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Ultrawideband frequency range: 100 MHz to 40 GHz  
Attenuation range: 31.5 dB with 0.5 dB steps  
Bond pads for wire bond and ribbon bond  
Low insertion loss  
1.7 dB typical up to 18 GHz  
2.2 dB typical up to 26 GHz  
3.2 dB typical up to 40 GHz  
Attenuation accuracy  
±(0.10 + 2.0% of attenuation state) typical up to 26 GHz  
±(0.13 + 1.5% of attenuation state) typical up to 35 GHz  
±(0.30 + 1.5% of attenuation state) typical up to 40 GHz  
Typical step error  
±0.12 dB typical up to 26 GHz  
±0.30 dB typical up to 35 GHz  
±0.60 dB typical up to 40 GHz  
High input linearity  
Figure 1.  
P0.1dB insertion loss state: 31 dBm typical  
P0.1dB other attenuation states: 28 dBm typical  
IP3: 50 dBm typical  
GENERAL DESCRIPTION  
The ADRF5473 is a 6-bit digital attenuator with a 31.5 dB attenua-  
tion range in 0.5 dB steps manufactured in a silicon process attach-  
ed on a gallium arsenide (GaAs) carrier substrate. The substrate  
incorporates the bond pads for chip and wire assembly, and the  
bottom of the device is metalized and connected to ground.  
High RF power handling  
26 dBm steady state average  
31 dBm steady state peak  
Tight distribution in relative phase  
No low frequency spurious signals  
SPI and parallel mode control, CMOS/LVTTL compatible  
RF amplitude settling time (0.1 dB of final RF output): 250 ns  
18-pad, 3.171 mm × 1.616 mm, die on carrier [CHIP]  
This device operates from 100 MHz to 40 GHz with better than  
3.2 dB of insertion loss and excellent attenuation accuracy. The  
ADRF5473 has an RF input power handling capability of 26 dBm  
average and 31 dBm peak for all states.  
The ADRF5473 requires a dual-supply voltage of +3.3 V and  
−3.3 V. The device features serial peripheral interface (SPI), paral-  
lel mode control, and complementary metal-oxide semiconductor  
(CMOS)-/low voltage transistor to transistor logic (LVTTL)-compati-  
ble controls.  
APPLICATIONS  
Test and instrumentation  
Cellular infrastructure: 5G millimeter wave  
Military radios, radars, and electronic counter measures (ECMs)  
Microwave radios and very small aperture terminals (VSATs)  
The ADRF5473 is designed to match a characteristic impedance of  
50 Ω.  
Note that when referring to a single function of a multifunction pad  
in this data sheet, only the portion of the pad name that is relevant  
is mentioned. For full pad names of the multifunction pads, refer to  
the section.  
Rev. 0  
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog  
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to  
change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and  
registered trademarks are the property of their respective owners.  
DOCUMENT FEEDBACK  
TECHNICAL SUPPORT  

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