Datasheet > ADRF5547

ADRF5547

更新时间： 2024-11-25 14:58:15

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
15页	313K
描述
双通道 3.7 GHz 至 5.3 GHz 接收器前端

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ADRF5547 数据手册

Dual-Channel, 3.7 GHz to 5.3 GHz,

Receiver Front End

ADRF5547

Data Sheet

FEATURES

FUNCTIONAL BLOCK DIAGRAM

ADRF5547

Integrated dual-channel RF front end

2-stage LNA and high power SPDT switch

On-chip bias and matching

Single-supply operation

Gain

High gain mode: 33 dB typical at 4.6 GHz

Low gain mode: 18 dB typical at 4.6 GHz

Low noise figure

GND

ANT-ChA

GND

30 GND

29 RxOUT-ChA

28 GND

27 BP-ChA

26 PD-ChAB

25 NIC

24 BP-ChB

23 GND

SWCTRL-ChAB

SWVDD-ChAB

GND

High gain mode: 1.6 dB typical at 4.6 GHz

Low gain mode: 1.6 dB typical at 4.6 GHz

High channel to channel isolation

Between RxOUT-ChA and RxOUT-ChB: 45 dB typical

Between TERM-ChA and TERM-ChB: 53 dB typical

Low insertion loss: 0.50 dB typical at 4.6 GHz

High power handling at T_CASE= 105°C

Full lifetime

ANT-ChB

GND

22 RxOUT-ChB

21 GND

GND 10

Figure 1.

LTE average power (9 dB PAR): 40 dBm

Single event (<10 sec operation)

LTE average power (9 dB PAR): 43 dBm

High OIP3: 31 dBm typical

Power-down mode and low gain mode for LNA

Low supply current

High gain mode: 86 mA typical at 5 V

Low gain mode: 36 mA typical at 5 V

Power-down mode: 12 mA typical at 5 V

Positive logic control

40-lead, 6 mm × 6 mm LFCSP

APPLICATIONS

Wireless infrastructure

TDD massive multiple input and multiple output (MIMO) and

active antenna systems

TDD-based communication systems

In low gain mode, one stage of the two-stage LNAs is in bypass,

providing 18 dB gain at lower current of 36 mA. In power-down

mode, the LNAs are turned off and the device draws 12 mA.

GENERAL DESCRIPTION

The ADRF5547 is a dual-channel, integrated RF, front end

multichip module designed for time division duplexing (TDD)

applications that operates from 3.7 GHz to 5.3 GHz. The

ADRF5547 is configured in dual channels with a cascading

two-stage low noise amplifier (LNA) and a high power silicon,

single-pole, double-throw (SPDT) switch.

In transmit operation, when RF inputs are connected to a

termination pin (TERM-ChA or TERM-ChB), the switch

provides a low insertion loss of 0.50 dB and handles long term

evolution (LTE) average power (9 dB peak to average ratio

(PAR)) of 40 dBm for full lifetime operation and 43 dBm for

single event (<10 sec) LNA protection operation.

In high gain mode, the cascaded, two-stage LNA and switch

offer a low noise figure of 1.6 dB and high gain of 33 dB at

4.6 GHz with an output third order intercept point (OIP3) of

31 dBm (typical).

The device comes in an RoHS compliant, compact, 40-lead,

6 mm × 6 mm LFCSP.

Rev. A

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice.

No license is granted by implication or otherwise under any patent or patent rights of Analog

Devices. Trademarks and registeredtrademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Technical Support

www.analog.com

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