Dual-Channel, 3.7 GHz to 5.3 GHz,
Receiver Front End
ADRF5547
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
ADRF5547
Integrated dual-channel RF front end
2-stage LNA and high power SPDT switch
On-chip bias and matching
Single-supply operation
Gain
High gain mode: 33 dB typical at 4.6 GHz
Low gain mode: 18 dB typical at 4.6 GHz
Low noise figure
GND
GND
ANT-ChA
GND
1
2
3
4
5
6
7
8
9
30 GND
29 RxOUT-ChA
28 GND
27 BP-ChA
26 PD-ChAB
25 NIC
24 BP-ChB
23 GND
SWCTRL-ChAB
SWVDD-ChAB
GND
High gain mode: 1.6 dB typical at 4.6 GHz
Low gain mode: 1.6 dB typical at 4.6 GHz
High channel to channel isolation
Between RxOUT-ChA and RxOUT-ChB: 45 dB typical
Between TERM-ChA and TERM-ChB: 53 dB typical
Low insertion loss: 0.50 dB typical at 4.6 GHz
High power handling at TCASE = 105°C
Full lifetime
ANT-ChB
GND
22 RxOUT-ChB
21 GND
GND 10
Figure 1.
LTE average power (9 dB PAR): 40 dBm
Single event (<10 sec operation)
LTE average power (9 dB PAR): 43 dBm
High OIP3: 31 dBm typical
Power-down mode and low gain mode for LNA
Low supply current
High gain mode: 86 mA typical at 5 V
Low gain mode: 36 mA typical at 5 V
Power-down mode: 12 mA typical at 5 V
Positive logic control
40-lead, 6 mm × 6 mm LFCSP
APPLICATIONS
Wireless infrastructure
TDD massive multiple input and multiple output (MIMO) and
active antenna systems
TDD-based communication systems
In low gain mode, one stage of the two-stage LNAs is in bypass,
providing 18 dB gain at lower current of 36 mA. In power-down
mode, the LNAs are turned off and the device draws 12 mA.
GENERAL DESCRIPTION
The ADRF5547 is a dual-channel, integrated RF, front end
multichip module designed for time division duplexing (TDD)
applications that operates from 3.7 GHz to 5.3 GHz. The
ADRF5547 is configured in dual channels with a cascading
two-stage low noise amplifier (LNA) and a high power silicon,
single-pole, double-throw (SPDT) switch.
In transmit operation, when RF inputs are connected to a
termination pin (TERM-ChA or TERM-ChB), the switch
provides a low insertion loss of 0.50 dB and handles long term
evolution (LTE) average power (9 dB peak to average ratio
(PAR)) of 40 dBm for full lifetime operation and 43 dBm for
single event (<10 sec) LNA protection operation.
In high gain mode, the cascaded, two-stage LNA and switch
offer a low noise figure of 1.6 dB and high gain of 33 dB at
4.6 GHz with an output third order intercept point (OIP3) of
31 dBm (typical).
The device comes in an RoHS compliant, compact, 40-lead,
6 mm × 6 mm LFCSP.
Rev. A
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice.
No license is granted by implication or otherwise under any patent or patent rights of Analog
Devices. Trademarks and registeredtrademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2019–2020 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com