Data Sheet
ADRF5515A
Dual-Channel, 3.3 GHz to 4.0 GHz, 20 W Receiver Front End
FEATURES
FUNCTIONAL BLOCK DIAGRAM
► Integrated dual-channel RF front end
► 2-stage LNA and high power silicon SPDT switch
► On-chip bias and matching
► Single-supply operation
► High power handling at TCASE = 105°C
► LTE average power (9 dB PAR) full lifetime: 43 dBm
► Gain
► High gain mode: 36 dB typical at 3.6 GHz
► Low gain mode: 17 dB typical at 3.6 GHz
► Low noise figure
► High gain mode: 1.05 dB typical at 3.6 GHz
► Low gain mode: 1.05 dB typical at 3.6 GHz
► High isolation
► RXOUT-CHA and RXOUT-CHB: 47 dB typical
► TERM-CHA and TERM-CHB: 75 dB typical
► Low insertion loss: 0.5 dB typical at 3.6 GHz
► High OIP3: 35 dBm typical
Figure 1.
GENERAL DESCRIPTION
The ADRF5515A is a dual-channel, integrated RF, front-end, mul-
tichip module designed for time division duplexing (TDD) appli-
cations. The device operates from 3.3 GHz to 4.0 GHz. The
ADRF5515A is configured in dual channels with a cascading,
two-stage low noise amplifier (LNA) and a high-power silicon single-
pole, double-throw (SPDT) switch.
► Power-down mode and low gain mode
► Low supply current
► High gain mode: 95 mA typical at 5 V
► Low gain mode: 48 mA typical at 5 V
► Power-down mode: 13 mA typical at 5 V
► Positive logic control
► 6 mm × 6 mm, 40-lead LFCSP package
► Pin compatible with the ADRF5515 and the ADRF5519, and the
10 W versions, ADRF5545A and ADRF5549
In high gain mode, the cascaded two-stage LNA and switch offer a
low noise figure of 1.05 dB and a high gain of 36 dB at 3.6 GHz,
with an output third-order intercept (OIP3) point of 35 dBm (typical).
In low gain mode, one stage of the two-stage LNA is in bypass,
providing 17 dB of gain at a lower current of 48 mA. In power-down
mode, the LNAs are turned off and the device draws 13 mA.
In transmit operation, when RF inputs are connected to a termi-
nation pin (TERM-CHA or TERM-CHB), the switch provides low
insertion loss of 0.5 dB and handles long-term evolution (LTE)
average power (9 dB peak to average ratio (PAR)) of 43 dBm for
full lifetime operation.
APPLICATIONS
► Wireless infrastructure
► TDD massive multiple input and multiple output and active
antenna systems
The device comes in an RoHS-compliant, compact, 6 mm × 6 mm,
40-lead lead frame chip scale package (LFCSP).
► TDD-based communication systems
Rev. 0
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