Datasheet > ADRF5132BCPZN-R7

ADRF5132BCPZN-R7

更新时间： 2024-09-25 02:51:35

品牌	Logo	应用领域
亚德诺 - ADI		射频微波光电二极管
页数	文件大小	规格书
12页	362K
描述
High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz

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ADRF5132BCPZN-R7 数据手册

High Power, 20 W Peak, Silicon SPDT,

Reflective Switch, 0.7 GHz to 5.0 GHz

ADRF5132

Data Sheet

FEATURES

FUNCTIONAL BLOCK DIAGRAM

ADRF5132

Reflective, 50 Ω design

Low insertion loss: 0.6 dB typical at 2.7 GHz

High power handling at T_CASE= 105°C

Long-term (>10 years operation)

Peak power: 43 dBm

GND

RF1

NIC

12 GND

11 RF2

CW power: 38 dBm

NIC

LTE power average (8 dB PAR): 35 dBm

Single event (<10 sec operation)

LTE power average (8 dB PAR): 41 dBm

High linearity

GND

P0.1dB: 42.5 dBm typical

Figure 1.

IP3: 65 dBm typical at 2.0 GHz to 4.0 GHz

ESD ratings

HBM: 2 kV, Class 2

CDM: 1.25 kV

Single positive supply: 5 V

Positive control, CMOS/TTL compatible

16-lead, 3 mm × 3 mm LFCSP package

APPLICATIONS

Cellular/4G infrastructure

Wireless infrastructure

Military and high reliability applications

Test equipment

Pin diode replacement

GENERAL DESCRIPTION

The ADRF5132 is a high power, reflective, 0.7 GHz to 5.0 GHz,

silicon, single-pole, double-throw (SPDT) reflective switch in a

leadless, surface-mount package. The switch is ideal for high

power and cellular infrastructure applications, like long-term

evolution (LTE) base stations. The ADRF5132 has high power

handling of 35 dBm LTE (average typical at 105°C), a low insertion

loss of 0.6 dB at 2.7 GHz, input third-order intercept of 65 dBm

(typical), and 0.1 dB compression (P0.1dB) of 42.5 dBm.

The on-chip circuitry operates at a single, positive supply

voltage of 5 V and a typical supply current of 1.1 mA typical,

making the ADRF5132 an ideal alternative to pin diode-based

switches.

The device is in a RoHS compliant, compact, 16-lead, 3 mm ×

3 mm LFCSP package.

Rev. B

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Technical Support

www.analog.com

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与ADRF5132BCPZN-R7相关器件

型号	品牌	获取价格	描述	数据表
ADRF5132-EVALZ	ADI	获取价格	High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
ADRF5141	ADI	获取价格	具有限制器的硅发射和接收开关，6 GHz 至 12 GHz
ADRF5144	ADI	获取价格	1 GHz 至 20 GHz 10 W 平均值硅 SPDT 反射开关
ADRF5160	ADI	获取价格	High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz
ADRF5160BCPZ	ADI	获取价格	High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz
ADRF5160BCPZ-R7	ADI	获取价格	High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz
ADRF5160-EVALZ	ADI	获取价格	High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz
ADRF5250	ADI	获取价格	0.1 GHz至6 GHz硅SP5T开关
ADRF5300	ADI	获取价格	24 GHz 至 32 GHz 硅 SPDT 反射开关
ADRF5301	ADI	获取价格	SPDT 37 GHz 至 49 GHz 硅开关

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