5秒后页面跳转
ADRF5130-EVALZ PDF预览

ADRF5130-EVALZ

更新时间: 2024-09-25 01:07:19
品牌 Logo 应用领域
亚德诺 - ADI /
页数 文件大小 规格书
11页 531K
描述
Low insertion loss

ADRF5130-EVALZ 数据手册

 浏览型号ADRF5130-EVALZ的Datasheet PDF文件第2页浏览型号ADRF5130-EVALZ的Datasheet PDF文件第3页浏览型号ADRF5130-EVALZ的Datasheet PDF文件第4页浏览型号ADRF5130-EVALZ的Datasheet PDF文件第5页浏览型号ADRF5130-EVALZ的Datasheet PDF文件第6页浏览型号ADRF5130-EVALZ的Datasheet PDF文件第7页 
High Power, 44 W Peak, Silicon SPDT,  
Reflective Switch, 0.7 GHz to 3.5 GHz  
ADRF5130  
Data Sheet  
FEATURES  
Reflective, 50 Ω design  
FUNCTIONAL BLOCK DIAGRAM  
V
CTL  
Low insertion loss: 0.6 dB typical to 2.0 GHz  
High isolation: 50 dB typical to 2.0 GHz  
High power handling  
ADRF5130  
RF1  
RF2  
RF input power, continuous wave (CW) at TCASE = 85°C  
43 dBm maximum operating  
46.5 dBm absolute maximum rating  
High linearity  
0.1 dB compression (P0.1dB): 46 dBm typical  
Input third-order intercept (IP3): 68 dBm typical to 2 GHz  
ESD ratings  
RFC  
Figure 1.  
Human body model (HBM): 2 kV, Class 2  
Charged device model (CDM): 1.25 kV  
Single positive supply: VDD = 5 V  
Positive control, TTL-compatible: VCTL = 0 V or VDD  
24-lead, 4 mm × 4 mm LFCSP package (16 mm2)  
APPLICATIONS  
Cellular/4G infrastructure  
Wireless infrastructure  
Military and high reliability applications  
Test equipment  
Pin diode replacement  
GENERAL DESCRIPTION  
The ADRF5130 is a high power, reflective, 0.7 GHz to 3.5 GHz,  
silicon, single-pole, double-throw (SPDT) switch in a leadless,  
surface-mount package. The switch is ideal for high power and  
cellular infrastructure applications, like long-term evolution (LTE)  
base stations. The ADRF5130 has high power handling of 43 dBm  
(maximum), a low insertion loss of 0.6 dB, input third-order  
intercept of 68 dBm (typical), and 0.1 dB compression (P0.1dB)  
of 46 dBm. On-chip circuitry operates at a single, positive  
supply voltage of 5 V and typical supply current of 1.06 mA,  
making the ADRF5130 an ideal alternative to pin diode-based  
switches.  
The device comes in a RoHS compliant, compact, 24-lead, 4 mm ×  
4 mm LFCSP package.  
Rev. A  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks are theproperty of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700 ©2016–2017 Analog Devices, Inc. All rights reserved.  
Technical Support  
www.analog.com  
 
 
 
 

与ADRF5130-EVALZ相关器件

型号 品牌 获取价格 描述 数据表
ADRF5132 ADI

获取价格

High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
ADRF5132BCPZN ADI

获取价格

High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
ADRF5132BCPZN-R7 ADI

获取价格

High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
ADRF5132-EVALZ ADI

获取价格

High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
ADRF5141 ADI

获取价格

具有限制器的硅发射和接收开关,6 GHz 至 12 GHz
ADRF5144 ADI

获取价格

1 GHz 至 20 GHz 10 W 平均值硅 SPDT 反射开关
ADRF5160 ADI

获取价格

High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz
ADRF5160BCPZ ADI

获取价格

High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz
ADRF5160BCPZ-R7 ADI

获取价格

High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz
ADRF5160-EVALZ ADI

获取价格

High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz