High Power, 20 W Peak, Silicon SPDT,
Reflective Switch, 0.7 GHz to 5.0 GHz
ADRF5132
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
ADRF5132
Reflective, 50 Ω design
Low insertion loss: 0.6 dB typical at 2.7 GHz
High power handling at TCASE = 105°C
Long-term (>10 years operation)
Peak power: 43 dBm
GND
RF1
NIC
1
2
3
4
12 GND
11 RF2
CW power: 38 dBm
10
9
NIC
LTE power average (8 dB PAR): 35 dBm
Single event (<10 sec operation)
LTE power average (8 dB PAR): 41 dBm
High linearity
GND
GND
P0.1dB: 42.5 dBm typical
Figure 1.
IP3: 65 dBm typical at 2.0 GHz to 4.0 GHz
ESD ratings
HBM: 2 kV, Class 2
CDM: 1.25 kV
Single positive supply: 5 V
Positive control, CMOS/TTL compatible
16-lead, 3 mm × 3 mm LFCSP package
APPLICATIONS
Cellular/4G infrastructure
Wireless infrastructure
Military and high reliability applications
Test equipment
Pin diode replacement
GENERAL DESCRIPTION
The ADRF5132 is a high power, reflective, 0.7 GHz to 5.0 GHz,
silicon, single-pole, double-throw (SPDT) reflective switch in a
leadless, surface-mount package. The switch is ideal for high
power and cellular infrastructure applications, like long-term
evolution (LTE) base stations. The ADRF5132 has high power
handling of 35 dBm LTE (average typical at 105°C), a low insertion
loss of 0.6 dB at 2.7 GHz, input third-order intercept of 65 dBm
(typical), and 0.1 dB compression (P0.1dB) of 42.5 dBm.
The on-chip circuitry operates at a single, positive supply
voltage of 5 V and a typical supply current of 1.1 mA typical,
making the ADRF5132 an ideal alternative to pin diode-based
switches.
The device is in a RoHS compliant, compact, 16-lead, 3 mm ×
3 mm LFCSP package.
Rev. B
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