Datasheet > ADRF5160-EVALZ

ADRF5160-EVALZ

更新时间： 2024-11-25 02:51:39

品牌	Logo	应用领域
亚德诺 - ADI		光电二极管
页数	文件大小	规格书
12页	351K
描述
High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ADRF5160-EVALZ 数据手册

High Power, 88 W Peak, Silicon SPDT,

Reflective Switch, 0.7 GHz to 4.0 GHz

Data Sheet

ADRF5160

FEATURES

FUNCTIONAL BLOCK DIAGRAM

CTL

Reflective, 50 Ω design

Low insertion loss: 0.7 dB typical to 2.0 GHz

High power handling at T_CASE= 105°C

Long-term (>10 years) average

CW power: 43 dBm

ADRF5160

RF1

RF2

Peak power: 49 dBm

LTE average power (8 dB PAR): 41 dBm

Single event (<10 sec) average

LTE average power (8 dB PAR): 44 dBm

High linearity

PACKAGE

BASE

RFC

GND

P0.1dB: 47 dBm typical

GND

IP3: 70 dBm typical

ESD ratings

Figure 1.

HBM: 4 kV, Class 3A

CDM: 1.25 kV

Single positive supply: 5 V

Positive control, CMOS/TTL compatible

32-lead, 5 mm × 5 mm LFCSP package

APPLICATIONS

Wireless infrastructure

Military and high reliability applications

Test equipment

Pin diode replacement

GENERAL DESCRIPTION

The ADRF5160 is a silicon-based, high power, 0.7 GHz to

4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective

switch in a leadless, surface-mount package. The switch is ideal

for high power and cellular infrastructure applications, such as

long-term evolution (LTE) base stations. The ADRF5160 has

high power handling of 41 dBm (8 dB PAR LTE, long-term

(>10 years) average typical), a low insertion loss of 0.7 dB typical

to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm

(typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm.

On-chip circuitry operates at a single positive supply voltage of

5 V at a typical supply current of 1.1 mA, making the ADRF5160

an ideal alternative to pin diode-based switches.

The ADRF5160 comes in an RoHS compliant, compact, 32-lead,

5 mm × 5 mm LFCSP.

Rev. 0

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rightsof third parties that may result fromits use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks andregisteredtrademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

www.analog.com

12 3 4 5 6 7...12

中文翻译

下载PDF

与ADRF5160-EVALZ相关器件

型号	品牌	获取价格	描述	数据表
ADRF5250	ADI	获取价格	0.1 GHz至6 GHz硅SP5T开关
ADRF5300	ADI	获取价格	24 GHz 至 32 GHz 硅 SPDT 反射开关
ADRF5301	ADI	获取价格	SPDT 37 GHz 至 49 GHz 硅开关
ADRF5345	ADI	获取价格	高线性度硅SP4T开关，1.8 GHz至3.8 GHz
ADRF5347	ADI	获取价格	高线性度、硅 SP4T 开关，1.8GHz 至 3.8GHz
ADRF5424	ADI	获取价格	载波裸片，硅SPDT开关，100 MHz至60 GHz
ADRF5473	ADI	获取价格	Die on Carrier, Silicon Digital Attenuator, 0.5 dB LSB, 6-Bit, 100 MHz to 40 GHz
ADRF5473BCZ	ADI	获取价格	Die on Carrier, Silicon Digital Attenuator, 0.5 dB LSB, 6-Bit, 100 MHz to 40 GHz
ADRF5473BCZ-GP	ADI	获取价格	Die on Carrier, Silicon Digital Attenuator, 0.5 dB LSB, 6-Bit, 100 MHz to 40 GHz
ADRF5473BCZ-SX	ADI	获取价格	Die on Carrier, Silicon Digital Attenuator, 0.5 dB LSB, 6-Bit, 100 MHz to 40 GHz

与ADRF5160-EVALZ相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

ADRF5160-EVALZ

ADRF5160-EVALZ 数据手册

与ADRF5160-EVALZ相关器件

与ADRF5160-EVALZ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ADRF5160-EVALZ

ADRF5160-EVALZ 数据手册

与ADRF5160-EVALZ相关器件

与ADRF5160-EVALZ相关文章

您还可以找

您在本页遇到什么问题？