Datasheet > ADRF5130

ADRF5130

更新时间： 2024-01-03 22:02:31

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
11页	531K
描述
Low insertion loss

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技术参数
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ADRF5130 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	LCC24,.16SQ,20
针数：	24	Reach Compliance Code：	compliant
风险等级：	2.24	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	46.5 dBm
JESD-609代码：	e3	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	24
准时：	0.75 µs	最大工作频率：	3500 MHz
最小工作频率：	700 MHz	最高工作温度：	105 °C
最低工作温度：	-40 °C	封装等效代码：	LCC24,.16SQ,20
端口终止：	REFLECTIVE	电源：	5 V
射频/微波设备类型：	SPDT	表面贴装：	YES
端子面层：	Tin (Sn)	Base Number Matches：	1

ADRF5130 数据手册

High Power, 44 W Peak, Silicon SPDT,

Reflective Switch, 0.7 GHz to 3.5 GHz

ADRF5130

Data Sheet

FEATURES

Reflective, 50 Ω design

FUNCTIONAL BLOCK DIAGRAM

CTL

Low insertion loss: 0.6 dB typical to 2.0 GHz

High isolation: 50 dB typical to 2.0 GHz

High power handling

ADRF5130

RF1

RF2

RF input power, continuous wave (CW) at T_CASE= 85°C

43 dBm maximum operating

46.5 dBm absolute maximum rating

High linearity

0.1 dB compression (P0.1dB): 46 dBm typical

Input third-order intercept (IP3): 68 dBm typical to 2 GHz

ESD ratings

RFC

Figure 1.

Human body model (HBM): 2 kV, Class 2

Charged device model (CDM): 1.25 kV

Single positive supply: V_DD= 5 V

Positive control, TTL-compatible: V_CTL= 0 V or V_DD

24-lead, 4 mm × 4 mm LFCSP package (16 mm²)

APPLICATIONS

Cellular/4G infrastructure

Wireless infrastructure

Military and high reliability applications

Test equipment

Pin diode replacement

GENERAL DESCRIPTION

The ADRF5130 is a high power, reflective, 0.7 GHz to 3.5 GHz,

silicon, single-pole, double-throw (SPDT) switch in a leadless,

surface-mount package. The switch is ideal for high power and

cellular infrastructure applications, like long-term evolution (LTE)

base stations. The ADRF5130 has high power handling of 43 dBm

(maximum), a low insertion loss of 0.6 dB, input third-order

intercept of 68 dBm (typical), and 0.1 dB compression (P0.1dB)

of 46 dBm. On-chip circuitry operates at a single, positive

supply voltage of 5 V and typical supply current of 1.06 mA,

making the ADRF5130 an ideal alternative to pin diode-based

switches.

The device comes in a RoHS compliant, compact, 24-lead, 4 mm ×

4 mm LFCSP package.

Rev. A

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registeredtrademarks are theproperty of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Technical Support

www.analog.com

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与ADRF5130相关器件

型号	品牌	获取价格	描述	数据表
ADRF5130BCPZ	ADI	获取价格	Low insertion loss
ADRF5130BCPZ-R7	ADI	获取价格	Low insertion loss
ADRF5130-EVALZ	ADI	获取价格	Low insertion loss
ADRF5132	ADI	获取价格	High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
ADRF5132BCPZN	ADI	获取价格	High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
ADRF5132BCPZN-R7	ADI	获取价格	High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
ADRF5132-EVALZ	ADI	获取价格	High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
ADRF5141	ADI	获取价格	具有限制器的硅发射和接收开关，6 GHz 至 12 GHz
ADRF5144	ADI	获取价格	1 GHz 至 20 GHz 10 W 平均值硅 SPDT 反射开关
ADRF5160	ADI	获取价格	High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz

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