Silicon SP4T Switch,
Reflective, 9 kHz to 44 GHz
ADRF5047
Data Sheet
FEATURES
Ultrawideband frequency range: 9 kHz to 44 GHz
Reflective design
FUNCTIONAL BLOCK DIAGRAM
ADRF5047
Low insertion loss
20
19
18
17
16
1.5 dB to 18 GHz
2.4 dB to 40 GHz
2.7 dB to 44 GHz
High isolation
47 dB to 18 GHz
33 dB to 40 GHz
1
2
3
4
5
15
14
13
12
11
RF2
GND
GND
GND
RF3
V1
GND
RFC
GND
VSS
DRIVER
31 dB to 44 GHz
6
7
8
9
10
High input linearity
P0.1dB: 26.5 dBm typical
IP3: 50 dBm typical
Figure 1.
High RF input power handling
Through path: 26 dBm
Hot switching: 26 dBm
No low frequency spurious
0.1 dB RF settling time: 5.2 µs
20-terminal, 3 mm × 3 mm, RoHS-compliant, LGA package
Pin compatible with ADRF5046, fast switching version
APPLICATIONS
Industrial scanner
Test instrumentation
Cellular infrastructure—mmWave 5G
Military radios, radars, and electronic counter measures (ECMs)
Microwave radios and very small aperture terminals (VSATs)
GENERAL DESCRIPTION
The ADRF5047 is a reflective, single-pole, four-throw (SP4T)
switch manufactured in the silicon process.
The ADRF5047 is pin-compatible with the ADRF5046 fast
switching version, which operates from 100 MHz to 44 GHz.
The ADRF5047 operates from 9 kHz to 44 GHz with an insertion
loss of lower than 2.7 dB and an isolation of higher than 31 dB.
The device has a radio frequency (RF) input power handling
capability of 26.5 dBm for both through path and hot switching.
The ADRF5047 comes in a 20-terminal, 3 mm × 3 mm, RoHS-
compliant, land grid array (LGA) package and operates from
−40°C to +105°C.
The ADRF5047 draws a low current of 3 µA on the positive
supply of +3.3 V, and −110 µA on the negative supply of −3.3 V.
The device provides complementary metal-oxide semiconductor
(CMOS)-/low voltage transistor-transistor logic (LVTTL)-
compatible controls.
Rev. 0
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