Datasheet > 74V1G07_04

74V1G07_04

更新时间： 2024-11-04 04:01:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	114K
描述
SINGLE BUFFER (OPEN DRAIN)

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中文翻译

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数据手册

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74V1G07_04 数据手册

74V1G07

SINGLE BUFFER (OPEN DRAIN)

■

HIGH SPEED: t = 3.7ns (TYP.) at V = 5V

PD CC

LOW POWER DISSIPATION:

= 1µA(MAX.) at T =25°C

■

HIGH NOISE IMMUNITY:

= V = 28% V (MIN.)

NIH

NIL

■

POWER DOWN PROTECTION ON INPUT

OPERATING VOLTAGE RANGE:

SOT23-5L

SOT323-5L

T & R

(OPR) = 2V to 5.5V

■

IMPROVED LATCH-UP IMMUNITY

ORDER CODES

PACKAGE

DESCRIPTION

SOT23-5L

74V1G07STR

74V1G07CTR

The 74V1G07 is an advanced high-speed CMOS

SINGLE BUFFER (OPEN DRAIN) fabricated with

sub-micron silicon gate and double-layer metal

SOT323-5L

wiring C MOS technology.

Power down protection is provided on input and 0

to 7V can be accepted on input with no regard to

the supply voltage. This device can be used to

interface 5V to 3V.

The internal circuit is composed of 2 stages

including buffer output, which provide high noise

immunity and stable output.

PIN CONNECTION AND IEC LOGIC SYMBOLS

April 2004

1/9

12 3 4 5 6 7...9

中文翻译

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